DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor

A. Łusakowski,P. Bogusławski,T. Story
DOI: https://doi.org/10.1088/0953-8984/27/22/226002
2015-05-25
Abstract:Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.
Materials Science,Other Condensed Matter
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the microscopic mechanism of the magnetic anisotropy energy (MAE) in Ge\(_{1 - x}\)Mn\(_x\)Te ferromagnetic semiconductors, especially to explore the effects of spin - orbit coupling, free - carrier concentration and the environment around manganese ions on the magnetic anisotropy energy. Specifically: 1. **Research Background**: - GeTe is a narrow - band - gap IV - VI group semiconductor with a rhombohedral crystal structure. - Ge\(_{1 - x}\)Mn\(_x\)Te formed after doping with manganese (Mn) exhibits ferromagnetism and, under certain conditions, has an easy axis of magnetization perpendicular to the film plane. - Experimentally, it has been observed that in a single - crystal layer, when the manganese content is approximately 10 at.%, the easy axis of magnetization is along the [111] direction, while in a polycrystalline microstructure, it is an in - plane easy axis. 2. **Research Objectives**: - Through first - principles calculations (DFT), reveal the microscopic mechanism of magnetic anisotropy in Ge\(_{1 - x}\)Mn\(_x\)Te. - Study the effects of free - hole concentration, the arrangement of neighboring atoms of manganese ions, and crystal - structure parameters (such as the α angle and τ displacement) on the magnetic anisotropy energy. - Analyze the roles of spin - orbit coupling, spin - polarization of free carriers, and electron - density changes in magnetic anisotropy. 3. **Key Issues**: - **Effect of Free - Carrier Concentration**: Research shows that the presence of free holes can significantly enhance the magnetic anisotropy energy, and its sign (positive or negative) depends on the hole concentration. - **Effect of the Environment around Manganese Ions**: The atomic arrangements around different manganese ions can affect the magnetic anisotropy energy, indicating that microscopic disorder has an important impact on MAE. - **Effect of Crystal - Structure Parameters**: Changes in the internal displacement τ and the rhombohedral angle α have different effects on MAE in insulators and conductors. In particular, in conductors, the change in α is more significant. 4. **Methods and Results**: - Use the OpenMX software package for DFT calculations, taking into account the fully relativistic pseudopotential and spin - orbit coupling. - Calculate the magnetic anisotropy energy at different hole concentrations and find that as the hole concentration increases, MAE exhibits non - monotonic behavior. - Analyze the influence of different supercell sizes (2×2×2 and 3×3×3) on the results, indicating that a larger supercell can more accurately describe the interactions between manganese ions. In summary, this paper aims to deeply understand the origin of ferromagnetic anisotropy in Ge\(_{1 - x}\)Mn\(_x\)Te and its dependent factors through theoretical calculations, providing theoretical support for further exploration of its potential applications.