Thermoelectric properties of semiconductor nanowire networks

Oleksiy Roslyak,Andrei Piryatinski

DOI: https://doi.org/10.1063/1.4944715

2015-12-05

Abstract:To examine thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, $ZT$, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi$_2$Te$_3$ branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network $ZT$. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to study the thermoelectric properties of semiconductor nanowire networks through theoretical models and explore effective ways to improve the thermoelectric figure of merit (ZT).

Specifically, the article mainly focuses on the following aspects:

1. **Proposing a new theoretical model**:
The author proposes a theoretical method that maps semiconductor nanowire networks into two - port networks. Different from the traditional single - port (i.e., resistance) network model, this new model can perform large - scale calculations and shows the convergence of the thermoelectric figure of merit ZT as the number of junctions increases.

2. **Simulating and analyzing specific nanowire networks**:
Using the proposed model, the author conducts numerical simulations on Bi₂Te₃ branched nanowire (BNW) and Cayley tree nanowire (CTNW) networks. The research finds that phonon scattering at network junctions plays a dominant role in improving the network ZT. In particular, disordered BNW and CTNW show an order - of - magnitude enhancement in ZT compared to ordered structures.

3. **Investigating the influence of network structures on thermoelectric properties**:
The research shows that the preferred thermoelectric paths in disordered structures make the behavior of CTNW networks similar to that of BNW. This provides a method for modeling complex network structures, that is, mapping them into a set of BNW.

4. **Application of experimental parameters**:
The author also provides a formalism for simulating large - scale nanowire networks based on experimentally measurable thermoelectric parameters of a single T - junction.

### Key Formulas

- **Thermoelectric figure of merit ZT**:
\[
ZT=\frac{\sigma_{eh}S^{2}T}{\kappa_{eh}+\kappa_{ph}}
\]
where $\sigma_{eh}$ is the electrical conductivity of electron and hole transport, $S$ is the Seebeck coefficient, $\kappa_{eh}$ is the thermal conductivity caused by charge carriers, and $\kappa_{ph}$ is the thermal conductivity caused by phonons.

- **TE admittance matrix Y**:
\[
Y = \begin{pmatrix}
e^{2}f_{eh}(\eta)L_{0}&ef_{eh}(\eta)L_{1}\\
ef_{eh}(\eta)L_{1}&f_{eh}(\eta)L_{2}+f_{ph}(\xi,\eta)\kappa_{ph}T
\end{pmatrix}
\]

- **Expression of TE figure of merit ZT**:
\[
ZT=\frac{Y_{12}^{2}}{\det(Y)}
\]
where $Y_{12}$ is the off - diagonal element of the admittance matrix.

### Summary

The main purpose of the paper is to study the thermoelectric properties of semiconductor nanowire networks by introducing a new two - port network model and shows, through numerical simulations, the significant advantages of disordered network structures in improving the thermoelectric figure of merit. This provides important theoretical basis and technical support for the design of high - performance thermoelectric materials and devices.