A wide ultraviolet spectra response photodetector based on epitaxial growth of highly-oriented ε-Ga2O3 crystal on diamond substrate
Qilong Yuan,Wei Wang,Wenrui Zhang,Mengting Qiu,Mingyang Yang,Zhenglin Jia,Bo Wang,Cheng-Te Lin,Kazhihito Nishimura,Keke Chang,Kuan W. A. Chee,Junfeng Cui,Nan Jiang,Qilong YuanWei WangWenrui ZhangMengting QiuMingyang YangZhenglin JiaBo WangCheng-Te LinKazhihito NishimuraKeke ChangKuan W. A. CheeJunfeng CuiNan Jianga Key Laboratory of Marine Materials and Related Technologies,Zhejiang Key Laboratory of Marine Materials and Protective Technologies,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo,PR Chinab Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices,Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo,PR Chinac Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,PR Chinad Chair of Functional Materials,Department of Materials Science & Engineering,Saarland University,Saarbrücken,Germanye Hefei National Laboratory for Physical Sciences at Microscale,University of Science and Technology of China,Hefei,PR China
DOI: https://doi.org/10.1080/26941112.2023.2256360
2023-10-03
Functional Diamond
Abstract:In recent years, diamond has shown great potential in solar-blind ultraviolet (UV) photodetection due to its ultrawide bandgap (∼ 5.5 eV) and other superior semiconductor properties. However, the response region of diamond photodetector is usually smaller than 230 nm, which cannot cover the whole solar-blind region from 200 to 280 nm. In this work, an ε-Ga 2 O 3 /diamond photodetector with wide spectra responsivity from 210 (or even lower) to 260 nm was fabricated. High-quality ε-Ga 2 O 3 film with columnar crystal was epitaxially grown on single crystalline CVD diamond substrate by pulse laser deposition (PLD). TEM characterization revealed that the ε-Ga 2 O 3 film grew along the orientation on diamond (100) substrate. The deep ultraviolet (DUV) photodetector based on the ε-Ga 2 O 3 /diamond structure showed a high light-to-dark ratio over 5.7 × 10 4 and good linear response to the incident light power density from 10 to 400 mW/cm 2 . Moreover, compared to other photodetectors, the fabricated ε-Ga 2 O 3 /diamond photodetector achieved high responsivity and wide spectra response region from 210 to 260 nm, with high solar-blind rejection ratio of 104 ( R 240 / R 280 ) and 165 ( R 210 / R 280 ), respectively. The extension of spectra region with high responsivity of the ε-Ga 2 O 3 /diamond photodetector can be attributed to the thin thickness of ε-Ga 2 O 3 film (around 200 nm) and parts of the DUV light were absorbed by diamond. The high responsivity and wide spectra response region indicate the fabricated ε-Ga 2 O 3 /diamond photodetector can be used for the detection of ultraviolet in the most of the DUV region.