Comment on "An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product" [Sci. Rep. 4, 7553 (2014)]

Kuntal Roy

DOI: https://doi.org/10.48550/arXiv.1412.8244

2015-01-23

Abstract:arXiv admin note: This submission has been withdrawn by arXiv administrators due to unprofessional personal attack.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

Ayan K. Biswas,Jayasimha Atulasimha,Supriyo Bandyopadhyay

DOI: https://doi.org/10.48550/arXiv.1412.7765

2014-12-24

Mesoscale and Nanoscale Physics

Abstract:A long-standing goal of computer technology is to process and store digital information with the same device in order to implement new architectures. One way to accomplish this is to use nanomagnetic `non-volatile' logic gates that can perform Boolean operations and then store the output data in the magnetization states of nanomagnets, thereby doubling as both logic and memory. Unfortunately, many proposed nanomagnetic gates do not possess the seven essential characteristics of a Boolean logic gate: concatenability, non-linearity, isolation between input and output, gain, universal logic implementation, scalability and error resilience. More importantly, their energy-delay products and error-rates vastly exceed that of conventional transistor-based logic gates, which is a drawback. Here, we propose a non-volatile voltage-controlled nanomagnetic logic gate that possesses all the necessary characteristics of a logic gate and whose energy-delay product is ~2 orders of magnitude less than that of other nano-magnetic (non-volatile) logic gates and ~1 order of magnitude less than that of (volatile) CMOS-based logic gates. The error-resilience is also superior to that of other known nanomagnetic gates.
Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory

David Winters,Md Ahsanul Abeed,Sourav Sahoo,Anjan Barman,Supriyo Bandyopadhyay

DOI: https://doi.org/10.1103/PhysRevApplied.12.034010

2019-09-11

Abstract:Magneto-elastic (straintronic) switching of bistable magnetostrictive nanomagnets is an extremely energy-efficient switching methodology for (magnetic) binary switches that has recently attracted widespread attention because of its potential application in ultra-low-power digital computing hardware. Unfortunately, this modality of switching is also error very prone at room temperature. Theoretical studies of switching error probability of magneto-elastic switches have predicted probabilities ranging from 10E-8-10E-3 at room temperature for ideal, defect-free nanomagnets, but experiments with real nanomagnets show a much higher probability that exceeds 0.1 in some cases. The obvious spoilers that can cause this large difference are defects and non-idealities. Here, we have theoretically studied the effect of common defects (that occur during fabrication) on magneto-elastic switching probability in the presence of room-temperature thermal noise. Surprisingly, we found that even small defects increase the switching error probabilities by orders of magnitude. There is usually a critical stress that leads to the lowest error probability and its value increases enormously in the presence of defects. All this could limit or preclude the application of magneto-elastic (straintronic) binary switches in either Boolean logic or memory, despite their excellent energy-efficiency, and restrict them to non-Boolean (e.g. neuromorphic, stochastic) computing applications. We also studied the difference between magneto-elastic switching with a stress pulse of constant amplitude and sinusoidal time-varying amplitude (e.g. due to a surface acoustic wave) and found that the latter method is more reliable and generates lower switching error probabilities in most cases, provided the time variation is reasonably slow.

Mesoscale and Nanoscale Physics
Ultra-low-energy non-volatile straintronic computing using single multiferroic composites

Kuntal Roy

DOI: https://doi.org/10.1063/1.4826688

2015-04-14

Abstract:The primary impediment to continued downscaling of traditional charge-based electronic devices in accordance with Moore's law is the excessive energy dissipation that takes place in the device during switching of bits. One very promising solution is to utilize multiferroic heterostructures, comprised of a single-domain magnetostrictive nanomagnet strain-coupled to a piezoelectric layer, in which the magnetization can be switched between its two stable states while dissipating minuscule amount of energy. However, no efficient and viable means of computing is proposed so far. Here we show that such single multiferroic composites can act as universal logic gates for computing purposes, which we demonstrate by solving the stochastic Landau-Lifshitz-Gilbert (LLG) equation of magnetization dynamics in the presence of room-temperature thermal fluctuations. The proposed concept can overwhelmingly simplify the design of large-scale circuits and portend a highly dense yet an ultra-low-energy computing paradigm for our future information processing systems.

Mesoscale and Nanoscale Physics
Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

Yong Zhu,Jitendra Pal

DOI: https://doi.org/10.3390/mi12111389

IF: 3.4

2021-11-12

Micromachines

Abstract:The authors would like to update the Figure 3 and Figure 7 to the published paper [...]

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Comment on "Reversibility of magnetic field driven transition from electronic phase separation state to single-phase state in manganites: A microscopic view"

R. Rawat,V G. Sathe,P. Chaddah

DOI: https://doi.org/10.48550/arXiv.1712.06345

2017-12-18

Strongly Correlated Electrons

Abstract:It is a comment on a paper titled "Reversibility of magnetic field driven transition from electronic phase separation state to single-phase state in manganites: A microscopic view" by Liu et al. Phys. Rev. B 96 (2017) 195154.
Reply to 'Comment on Universal out-of-equilibrium transport in Kondo-correlated quantum dots'

Enrique Muñoz,C. J. Bolech,Stefan Kirchner

DOI: https://doi.org/10.48550/arXiv.1308.0638

2013-08-03

Abstract:A recent comment on our work (Phys. Rev. Lett., vol. 110, 016601 (2013)) by <a class="link-external link-http" href="http://A.A.Aligia" rel="external noopener nofollow">this http URL</a> claims that we "made mistakes in the evaluation of the lesser quantities". It is further claimed that the distribution function of the single-particle selfenergy of the interacting region in the Fermi liquid regime, e.g. at small bias voltage, low temperature, and small frequency, is continuous. These claims are based on a comparison of the particle-hole symmetric case with results obtained from the approach of <a class="link-external link-http" href="http://A.A.Aligia" rel="external noopener nofollow">this http URL</a>. We disagree with these claims and show that the discrepancies that the comment alludes to originate from a violation of Ward identities by the method employed in the comment. A comparison of our approach with the numerical renormalization group shows perfect agreement for the symmetric case.

Strongly Correlated Electrons
Retraction Note: Quantized Majorana conductance.

Hao Zhang,Chun-Xiao Liu,Sasa Gazibegovic,Di Xu,John A Logan,Guanzhong Wang,Nick van Loo,Jouri D S Bommer,Michiel W A de Moor,Diana Car,Roy L M Op Het Veld,Petrus J van Veldhoven,Sebastian Koelling,Marcel A Verheijen,Mihir Pendharkar,Daniel J Pennachio,Borzoyeh Shojaei,Joon Sue Lee,Chris J Palmstrøm,Erik P A M Bakkers,S Das Sarma,Leo P Kouwenhoven

DOI: https://doi.org/10.1038/s41586-021-03373-x

IF: 64.8

2021-01-01

Nature

Abstract:This article has been retracted. Please see the Retraction Notice for more detail: https://doi.org/10.1038/s41586-021-03373-x.
MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

Akhilesh Jaiswal,Kaushik Roy

DOI: https://doi.org/10.48550/arXiv.1611.07738

2016-11-23

Abstract:In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and fast switching of nano-magnets using the magneto-electric (ME) effect. In this paper, we propose a voltage driven logic-device based on the ME induced switching of nano-magnets. We further demonstrate that the proposed logic-device, which exhibits decoupled read and write paths, can be used to construct a complete logic family including XNOR, NAND and NOR gates. The proposed logic family shows good scalability with a quadratic dependence of switching energy with respect to the switching voltage. Further, the proposed logic-device has better robustness against the effect of thermal noise as compared to the conventional current driven switching of nano-magnets. A device-to-circuit level coupled simulation framework, including magnetization dynamics and electron transport model, has been developed for analyzing the present proposal. Using our simulation framework, we present energy and delay results for the proposed Magneto-Electric Spin Logic (MESL) gates.

Emerging Technologies
Comment on ``Fundamental relation between electrical and thermoelectric transport coefficients in the quantum Hall regime''

Steven H. Simon

DOI: https://doi.org/10.48550/arXiv.cond-mat/9705001

1997-05-03

Abstract:Paper withdrawn due to errors. Revised version may or may not appear in the future.

Mesoscale and Nanoscale Physics
Withdrawal of "fabrication and Properties of <formula Formulatype="inline"> <tex Notation="TeX">$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$</tex> </formula> Structure for Ferroelectric DRAM (FEDRAM) FET"

Dan Xie,Yongyuan Zang,Yafeng Luo,Tian‐Ling Ren,Litian Liu

DOI: https://doi.org/10.1109/led.2009.2031531

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:This paper [ibid., vol. 30, no. 5, pp. 463-465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
Retraction Note: Quantized Majorana Conductance

Hao Zhang,Chunxiao Liu,Saša Gazibegović,Di Xu,J. A. Logan,Guanzhong Wang,Nick van Loo,Jouri D. S. Bommer,Michiel W. A. de Moor,Diana Car,Roy L. M. Op het Veld,P. J. van Veldhoven,Sebastian Koelling,Marcel A. Verheijen,Mihir Pendharkar,Daniel J. Pennachio,Borzoyeh Shojaei,Joon Sue Lee,C. J. Palmstrøm,Erik P. A. M. Bakkers,Sankar Das Sarma,Leo P. Kouwenhoven

DOI: https://doi.org/10.1038/s41586-021-03373-x

IF: 64.8

2021-01-01

Nature

Abstract:This article has been retracted. Please see the Retraction Notice for more detail: https://doi.org/10.1038/s41586-021-03373-x.
Comment on "A sensitivity study of the primary correlators used to characterize chiral-magnetically-driven charge separation'' by Magdy, Nie, Ma, and Lacey

Yicheng Feng,Fuqiang Wang,Jie Zhao

DOI: https://doi.org/10.48550/arXiv.2009.10057

2020-09-22

Abstract:This note points out an apparent error in the publication Phys.~Lett.~B {\bf 809} (2020) 135771 by Magdy, Nie, Ma, and Lacey.

Nuclear Experiment,Nuclear Theory
Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]

A. M. Bratkovsky,A. P. Levanyuk

DOI: https://doi.org/10.1103/PhysRevLett.100.149701

2007-09-28

Abstract:In a recent Letter [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007)] the authors claim that "even nanoscale capacitors and tunnel junctions may have out of plane polarization sufficient for memory applications." Here we show in an elementary way that this conclusion is not substantiated by their calculations and that they should have come to the opposite conclusion within their approximations.

Materials Science,Statistical Mechanics
Comment on "Ballistic Majorana Nanowire Devices" by Gul et al. Nature Nanotechnology 2018

S.M. Frolov,V. Mourik

2024-07-26

Abstract:This work re-analyzes Gul et al. Nature Nanotechnology 2018 "Ballistic Majorana nanowire devices" using fuller data from the original experiments released in 2023 on Zenodo. The authors have prepared a correction to their article that appeared in Nature Nanotechnology in 2024. However, the correction does not address the concerns we identify here. We demonstrate that the fuller data contain extensive evidence for quantum dots and disorder that are completely inconsistent with the authors' conclusion that they have achieved ballistic devices containing zero bias peaks of likely Majorana origin. We show how data selection, data cropping and undisclosed data processing played a role in composing the figures of the final published paper.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons,Superconductivity
Withdrawal of “Fabrication and Properties of <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85}\hbox{Ti}_{3}\hbox{O}_{12}/\hbox{HfO}_{2}/\hbox{Si}$</tex></formula> Structure for Ferroelectric DRAM (FEDRAM) FET”

Dan Xie,Yongyuan Zang,Yafeng Luo,Tianling Ren,Litian Liu

DOI: https://doi.org/10.1109/LED.2009.2031531

IF: 4.8157

2009-01-01

IEEE Electron Device Letters

Abstract:This paper [ibid., vol. 30, no. 5, pp. 463-465, May 2009] is withdrawn at the request of the authors. The lead author has made errors in the IEEE member grades of the coauthors and not all the coauthors have prior knowledge of the submission by the lead author.
Some Comments on the Note "comment on 'Single-Parameter Quantum Charge and Spin Pumping in Armchair Graphene Nanoribbons' by Zhu and Berakdar (Arxiv:1207.3457)"

Y. Zhou,M. W. Wu

DOI: https://doi.org/10.48550/arxiv.1207.4365

2012-01-01

Abstract:In response to the comment by Zhu and Berakdar (arXiv:1207.3457) that the physical system considered by them in their previous work [Ding et al., PRB 84, 115433 (2011)] is conceptually different from ours in the appendix of our latest paper [Zhou and Wu, arXiv:1206.3435], we show why they are relevant and further point out conceptually the problems in their work. We also point out that the main supporting arguments in their comment are incorrect.
Reply to Comment [<a class="link-https" data-arxiv-id="0810.3244v1" href="https://arxiv.org/abs/0810.3244v1">arXiv:0810.3244v1</a>] by R.S. Decca et al. on "Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials"

Diego A. R. Dalvit,Steve K. Lamoreaux

DOI: https://doi.org/10.48550/arXiv.0812.1056

2008-12-06

Abstract:We show that the claims expressed in the Comment <a class="link-https" data-arxiv-id="0810.3244v1" href="https://arxiv.org/abs/0810.3244v1">arXiv:0810.3244v1</a> by R.S. Decca et al against our paper, D.A.R. Dalvit and S.K. Lamoreaux, Phys. Rev. Lett. {\bf 101}, 163203 (2008), are wrong and manifestly inconsistent with basic principles of statistical physics.

Quantum Physics
Comment on "reply to Arxiv:1212.3831V1 'comment On: Magnetotransport Through Graphene Spin Valves and Its Following Works' "by Ding, Zhu, and Berakdar (Arxiv:1302.0613V1)

Yang-Bo Zhou,Ming-Wei Wu

2012-01-01

Abstract:We comment on the reply to our previous comment arXiv:1212.3831v1 (See also arXiv:1212.3831v2) by Ding, Zhu, and Berakdar (arXiv:1302.0613v1)
Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Sujaya Kumar Vishwanath,Benny Febriansyah,Si En Ng,Tisita Das,Jyotibdha Acharya,Rohit Abraham John,Divyam Sharma,Putu Andhita Dananjaya,Metikoti Jagadeeswararao,Naveen Tiwari,Mohit Ramesh Chandra Kulkarni,Wen Siang Lew,Sudip Chakraborty,Arindam Basu,Nripan Mathews

DOI: https://doi.org/10.1039/d4mh90073a

IF: 13.3

2024-09-01

Materials Horizons

Abstract:Correction for 'High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing' by Sujaya Kumar Vishwanath et al. , Mater. Horiz. , 2024, 11 , 2643–2656, https://doi.org/10.1039/D3MH02055J.

materials science, multidisciplinary,chemistry
Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Bahniman Ghosh,Rik Dey,Leonard F. Register,Sanjay K. Banerjee

DOI: https://doi.org/10.1063/1.4959089

2016-03-18

Abstract:In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets.

Mesoscale and Nanoscale Physics

Comment on "An error-resilient non-volatile magneto-elastic universal logic gate with ultralow energy-delay product" [Sci. Rep. 4, 7553 (2014)]

Magneto-elastic universal logic gate: A non-volatile, error-resilient Boolean logic gate with ultra-low energy-delay product

Error Probability in Magneto-elastic Switching of Non-ideal Nanomagnets with Defects: A Case Study for the Viability of Straintronic Logic and Memory

Ultra-low-energy non-volatile straintronic computing using single multiferroic composites

Erratum: Zhu, Y.; Pal, J. Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation. Micromachines 2021, 12, 1237

Comment on "Reversibility of magnetic field driven transition from electronic phase separation state to single-phase state in manganites: A microscopic view"

Reply to 'Comment on Universal out-of-equilibrium transport in Kondo-correlated quantum dots'

Retraction Note: Quantized Majorana conductance.

MESL: Proposal for a Non-volatile Cascadable Magneto-Electric Spin Logic

Comment on ``Fundamental relation between electrical and thermoelectric transport coefficients in the quantum Hall regime''

Withdrawal of "fabrication and Properties of &lt;formula Formulatype="inline"&gt; &lt;tex Notation="TeX"&gt;$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$&lt;/tex&gt; &lt;/formula&gt; Structure for Ferroelectric DRAM (FEDRAM) FET"

Retraction Note: Quantized Majorana Conductance

Comment on "A sensitivity study of the primary correlators used to characterize chiral-magnetically-driven charge separation'' by Magdy, Nie, Ma, and Lacey

Comment on ``Elastic Stabilization of a Single-Domain Ferroelectric State in Nanoscale Capacitors and Tunnel Junctions" [N.A. Pertsev and H. Kohlstedt, Phys. Rev. Lett. 98, 257603 (2007).]

Comment on "Ballistic Majorana Nanowire Devices" by Gul et al. Nature Nanotechnology 2018

Withdrawal of “Fabrication and Properties of <formula formulatype="inline"><tex Notation="TeX">$ \hbox{Pt}/\hbox{Bi}_{3.15}\hbox{Nd}_{0.85}\hbox{Ti}_{3}\hbox{O}_{12}/\hbox{HfO}_{2}/\hbox{Si}$</tex></formula> Structure for Ferroelectric DRAM (FEDRAM) FET”

Some Comments on the Note "comment on 'Single-Parameter Quantum Charge and Spin Pumping in Armchair Graphene Nanoribbons' by Zhu and Berakdar (Arxiv:1207.3457)"

Reply to Comment [<a class="link-https" data-arxiv-id="0810.3244v1" href="https://arxiv.org/abs/0810.3244v1">arXiv:0810.3244v1</a>] by R.S. Decca et al. on "Contribution of drifting carriers to the Casimir-Lifshitz and Casimir-Polder interactions with semiconductor materials"

Comment on "reply to Arxiv:1212.3831V1 'comment On: Magnetotransport Through Graphene Spin Valves and Its Following Works' "by Ding, Zhu, and Berakdar (Arxiv:1302.0613V1)

Correction: High-performance one-dimensional halide perovskite crossbar memristors and synapses for neuromorphic computing

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Withdrawal of "fabrication and Properties of <formula Formulatype="inline"> <tex Notation="TeX">$ \hbox{pt}/\hbox{bi}_{3.15}\hbox{nd}_{0.85}\hbox{ti}_{3}\hbox{o}_{12}/\hbox{hfo}_{2}/\hbox{si}$</tex> </formula> Structure for Ferroelectric DRAM (FEDRAM) FET"