Determining doping efficiency and mobility from conductivity and Seebeck data of n-doped C60 layers

Torben Menke,Debdutta Ray,Hans Kleemann,Karl Leo,Moritz Riede
DOI: https://doi.org/10.1002/pssb.201552088
2014-10-27
Abstract:In this work, we introduce models for deriving lower limits for the key parameters doping efficiency, charge carrier concentration, and charge carrier mobility from conductivity data of doped organic semiconductors. The models are applied to data of thin layers of Fullerene C60 n-doped by four different n-dopants. Combining these findings with thermoelectric Seebeck data, the energetic position of the transport level can be narrowed down and trends for the absolute values are derived.
Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to determine the key parameters of n - type doped C60 layers, such as doping efficiency, free charge carrier concentration and charge carrier mobility, through conductivity and thermoelectric Seebeck data. Specifically, the authors introduced a model to derive the lower limits of these key parameters from the conductivity data, and combined with the thermoelectric Seebeck data to further narrow the range of the energy position of the transport energy level. ### Main problems: 1. **Doping Efficiency**: Evaluate the doping effects of different dopants in C60 layers. 2. **Charge Carrier Concentration**: Determine the number of free electrons generated after doping. 3. **Charge Carrier Mobility**: Measure and estimate the electron mobility after doping. ### Method overview: - **Conductivity data**: Derive the lower limits of doping efficiency, free charge carrier concentration and mobility through the conductivity formula \(\sigma = e \cdot n_e \cdot \mu\). - **Thermoelectric Seebeck data**: Combine the Seebeck coefficient \(S\) and Seebeck energy \(E_S\) to further determine the position of the transport energy level. ### Formula summary: - Relationship between conductivity and free charge carrier concentration and mobility: \[ \sigma = e \cdot n_e \cdot \mu \] - Relationship between free charge carrier concentration and doping efficiency: \[ n_e = \eta_{\text{dop}} \cdot n_D \] - Definition of doping concentration: \[ C = \frac{n_D}{n_H} \] - Total molecular number density: \[ n_{\text{Mol}} = n_H + n_D \] - Lower limit of free charge carrier concentration: \[ n_{e,\text{LL}} = \frac{\sigma}{e \cdot \mu_{\text{UL}}} \] - Lower limit of doping efficiency: \[ \eta_{\text{dop,LL}} = \frac{\sigma}{e \cdot \mu_{\text{UL}} \cdot n_{\text{Mol}} \cdot \left(1 + C\right) / C} \] Through these methods, the authors can not only estimate the lower limits of doping efficiency, free charge carrier concentration and mobility, but also combine thermoelectric data to more accurately determine the position of the transport energy level. This provides important insights for understanding the doping mechanism in organic semiconductors.