Abstract:The combined dependence of the electrical conductivity and Seebeck coefficient on the carrier density shows that the electrical conductivity at high doping is limited by the repulsion of electrons by other electrons. The carrier density nx corresponding to the maximum electrical conductivity coincides with the carrier density at which the Seebeck coefficient collapses onto Heike's law. Molecular doping is a key strategy to enhance the electrical conductivity of organic semiconductors. Typically, the electrical conductivity shows a maximum value upon increased doping, after which the conductivity decreases. This decrease in conductivity is commonly attributed to unfavorable changes in the morphology. However, in recent simulation work, has shown, that the conductivity—at high doping—is instead limited by electron–electron repulsion rather than by morphology, at least for some material combinations. Based on the simulations, this limitation is expected to show up in the dependence of the Seebeck coefficient versus carrier density: the Seebeck coefficient will follow Heike's formula if carrier–carrier repulsion limits the conductivity. Here, the electrical conductivity and Seebeck coefficient are measured as a function of doping for a series of n‐type organic semiconductors. Additionally, the resulting carrier density is measured using metal‐insulator‐semiconductor diodes, which link dopant loading and the number of charge carriers. At high carrier densities, the Seebeck coefficient indeed follows Heike's formula, confirming that the conductivity is limited by carrier–carrier repulsion rather than by morphological effects. This study shows that current models of hopping transport in organic semiconductors may be incomplete. As a result, this study offers novel insights in the design of organic semiconductors.

Determining doping efficiency and mobility from conductivity and Seebeck data of n-doped C60 layers

Doped C 60 Study from First Principles Simulation

Critical charge transport networks in doped organic semiconductors

Carrier–Carrier Repulsion Limits the Conductivity of N‐Doped Organic Semiconductors

Boosting the Seebeck Coefficient for Organic Coordination Polymers: Role of Doping-Induced Polaron Band Formation.

Seebeck Coefficient and Thermal Conductivity in Doped C-60

Electronic Transport Properties in Doped C-60 Molecular Devices

Search for Organic Thermoelectric Materials with High Mobility: the Case of 2,7-Dialkyl[1]benzothieno[3,2-b][1]benzothiophene Derivatives

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Charge profile of surface doped C60

Charge Transport Characteristics in Doped Organic Semiconductors Using Hall Effect

BN Doping in the Realm of Two-Dimensional Fullerene Network for Unparalleled Structural, Electronic, Optical, and HER Advancements: A Cutting-Edge DFT Investigation

Doping Effects and Electronic States in C60-Polymers

Unveiling the Interplay among End Group, Molecular Packing, Doping Level, and Charge Transport in N‐Doped Small‐Molecule Organic Semiconductors

n-type charge transport in heavily p-doped polymers

Electronic Structures in C60-Polymers (review)

Tuning The Transport Properties Of A (C-60)(2) Bridge With Electron And Hole Dopings

Revealing contributions to conduction from transport within ordered and disordered regions in highly doped conjugated polymers through analysis of temperature-dependent Hall measurements

ELECTRICAL CHARACTERIZATION OF SOLID C 60 /si HETEROJUNCTIONS——RECTIFYING PROPERTIES, ENERGY-BAND MODELS, AND BIAS-TEMPERATURE EFFECT