Abstract:We investigated the origin of so-called “hot-spots” in large area pixelless QWIP-LED upconverter devices, which are quantum well infrared photodetectors grown in series with a light emitting diode [E.Dupont et al., IEEE Photonics Technol. Lett. 14 (2002) 182]. The hot-spots, with surface densities varying from 20 to 3000cm−2 for the wafers studied, are LED electroluminescence singularities, which can be readily observed at temperatures below ∼100K. Their spatial FWHM is less than 1μm and they can have peak intensities of more than three orders of magnitude higher than the uniform background emission caused by the dark current through the QWIP device. In most cases the hot-spots were observed on mirror smooth, morphological defect-free surfaces. These electroluminescence abnormalities result from highly localized electron injection channels in the QWIP portion of the device. As there is no morphological abnormality in their locations, these defects are undetectable with established wafer screening instruments such as Nomarski and Surfscan, yet may be very common in MBE-grown heterostructures. Although correlation with dislocations is observed, the great majority of dislocations do not give rise to the hot-spots, and there are many hot-spots, which are not located in the proximity of any dislocation. We therefore, propose that the hot-spots arise from a local alloy separation in ternary layers, induced by floating organic molecules or molecular contamination clusters, resulting in nanowire-like defects. Highly localized drops in the layer resistivity caused by such defects will adversely affect the performance of any devices relying on vertical transport, particularly if the device current depends very strongly on the height of the potential barriers employed, such as in quantum well infrared photodetectors or resonant tunneling diodes. Also, for devices working at high current densities, such as certain lasers or HBTs, the presence of such defects may lead to early device failure.

Hot spots spontaneously emerging in thin film photovoltaics

Hot spot runaway in thin film photovoltaics and related structures

Hotspots and Performance Evaluation of Crystalline-Silicon and Thin-Film Photovoltaic Modules

Close examination of localized hot spots within photovoltaic modules

Photovoltaic hotspots: a mitigation technique and its thermal cycle

Elimination of Severe Shunting Problems Due to Air-Side Electrode Formation on Evaporated Poly-Si Thin-Film Solar Cells on Glass

The Hot-Spot Phenomenon and its Countermeasures in Bipolar Power Transistors by Analytical Electro-Thermal Simulation

The Analysis on Simulation and Invalidation of Hot-Spot Temperature Distribution in Micro-Defective Crystalline Silicon Solar Cells

Coupled electron--heat transport in nonuniform thin film semiconductor structures

On the Hotspot Problem in Flash Sintering

Significant Joule self-heating pervasive in the emergent thin-film transistor studies

Research on hot spot risk of high wattage solar modules

Self-heating effects in integrated circuits with hot spot method and electro-thermal coupling method

On the Existence of Submicron Diameter Current Shunts in Morphologically Perfect Device Layers

Real-Time Ab Initio Investigation on Hot Electron Relaxation Dynamics in Silicon

Effects on Amorphous Silicon Photovoltaic Performance from High-temperature Annealing Pulses in Photovoltaic Thermal Hybrid Devices

A Low Computational Cost and Accurate Thermal Calculation Method for Multi-hotspot IC

Numerical Simulation and Experimental Investigation of Transient Anode Surface Temperature in Vacuum Arc

A detailed analysis on the heat generated inside c-Si solar cell

Embedded Cooling for High-heat-flux Hotspots with Different Sizes

The Effect of Hybrid Photovoltaic Thermal Device Operating Conditions on Intrinsic Layer Thickness Optimization of Hydrogenated Amorphous Silicon Solar Cells