Fabrication of Ge/graphene heterojunction on polyethylene terephthalate by using electron beam evaporation

Lianbi Li,Lei Li,Binbin Ding,Rong Wang,Yuan Zang,Jichao Hu,Song Feng,Lin Cheng,Pengfei Cheng,Guoqing Zhang,Caijuan Xia
DOI: https://doi.org/10.1016/j.optmat.2022.113328
IF: 3.754
2022-12-12
Optical Materials
Abstract:A near-infrared photodetector was deposited directly Ge on the graphene substrate by electron beam evaporation. The Ge annealed at 500 °C shows good crystal quality,and then PDMS/PMMA was used to transfer the heterojunction to the flexible substrate, and the spectra of the Raman Ge/graphene heterojunction were basically the same before and after the transfer, indicating that the Ge/graphene transfer was successful and showed very high performance in the near-infrared region absorption rate. In addition, the photoresponsivity of the device is about 0.073 A W −1 with I light /I dark ratio of 1.5 × 10 3 at zero bias.
materials science, multidisciplinary,optics
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