Ferney A. Chaves,David Jiménez,Aron W. Cummings,Stephan Roche
Abstract:In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the tunneling current modeling in metal - graphene (MG) junctions and metal - insulator - graphene (MIG) heterostructures. Specifically, the paper aims to:
1. **Develop a comprehensive tunneling current model**: Based on the Bardeen Transfer Hamiltonian (BTH) method, provide an analytical model for metal - insulator - graphene heterostructures (MIG). This model can be used to understand the influence of different electrical and physical parameters on the tunneling current.
2. **Optimize contact resistance**: By studying the behavior of the tunneling current, especially the influence of different metal electrodes and insulator layer thicknesses on the tunneling current and contact resistance, provide theoretical support for optimizing the performance of graphene - based devices.
3. **Reveal the role of key parameters**: Analyze in detail the role of parameters such as the metal work function and insulator layer thickness in determining the differential contact resistance, helping to explain experimental phenomena and guide material selection and device design.
### Specific background
- **High carrier mobility and low density of states**: Although graphene has a very high carrier mobility, its low density of states (DOS) may suppress current injection, thus limiting the performance of graphene - based devices.
- **Lack of a complete model**: Although there have been many experimental studies on MG junctions, there is currently a lack of a complete tunneling current model, especially for the tunneling current between pure two - dimensional materials and metals.
### Research methods
- **BTH method**: Use the Bardeen Transfer Hamiltonian method to calculate the elastic tunneling probability, combined with the Fermi golden rule, quantitatively estimate the coupling strength between metal and graphene states, and thus obtain the analytical formula of the tunneling current.
- **Electrostatic analysis**: Establish a simple model to calculate the position of the Fermi level in the MIG heterostructure, taking into account factors such as charge transfer and short - range interactions.
### Main results
- **Tunneling current expression**: Derive the analytical expression of the tunneling current and analyze the tunneling current characteristics under different metal electrodes.
- **Change in contact resistance**: Study the change in differential contact resistance under different bias voltages, especially the behavior when the graphene Fermi level is aligned with the Dirac point.
- **Influence of geometric and electrical characteristics**: Explore the influence of insulator layer thickness and metal work function on the tunneling current and contact resistance, and reveal the relationship between geometric structure and electrical characteristics.
### Conclusion
The paper successfully established a tunneling current model for MIG heterostructures, revealed the important role of the metal work function and insulator layer thickness in determining the differential contact resistance, and provided a theoretical basis for optimizing graphene - based devices.