Model of the Electrostatics and Tunneling Current of Metal-Graphene Junctions and Metal-Insulator-Graphene Heterostructures

Ferney A. Chaves,David Jiménez,Aron W. Cummings,Stephan Roche
DOI: https://doi.org/10.48550/arXiv.1309.0390
2013-09-02
Abstract:In this paper we present a comprehensive model for the tunneling current of the metal-insulator-graphene heterostructure, based on the Bardeen Transfer Hamiltonian method, of the metal-insulator-graphene heterostructure. As a particular case we have studied the metal-graphene junction, unveiling the role played by different electrical and physical parameters in determining the differential contact resistance.
Mesoscale and Nanoscale Physics,Materials Science
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