Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Characterization of the FE-I4B pixel readout chip production run for the ATLAS Insertable B-layer upgrade

Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

The FE-I4 pixel readout system-on-chip resubmission for the insertable B-Layer project

ATLAS IBL Pixel Upgrade

The Pixel Detector of the ATLAS experiment for the Run2 at the Large Hadron Collider

ATLAS IBL: a challenging first step for ATLAS Upgrade at the sLHC

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Testbeam analysis of biasing structures for irradiated hybrid pixel detectors

The FE-I4 Telescope for particle tracking in testbeam experiments

SLID-ICV Vertical Integration Technology for the ATLAS Pixel Upgrades

Upgrade of the ALICE Inner Tracking System

Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Development of a FELIX based readout system for ITk strip hybrid module demonstrator for ATLAS Phase-II Upgrade

The upgrade of the ALICE Inner Tracking System

Characterization of the ATLAS Liquid Argon Front-End ASIC ALFE2 for the HL-LHC upgrade

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC