Cr-induced structural phase transformation in sputter deposited poly-AlN thin film from wurtzite to rocksalt structure and their effect on the optical properties

Ch Kishan Singh,Balmukund Shukla,Mukul Gupta,R Ramaseshan,Sandip Dhara
DOI: https://doi.org/10.1016/j.materresbull.2024.113043
IF: 5.6
2024-08-19
Materials Research Bulletin
Abstract:We report Cr doping-induced structural phase transformation (PT) in sputter-deposited polycrystalline-AlN thin film from wurtzite ( w ) to rocksalt ( r ) structure. Rietveld analysis shows that the steady substitution of Al ions by Cr ions in the w -AlN lattice distorts and compresses the wurtzite lattice along the c -axis. The chemical pressure exerted in the w -AlN lattice by the compression from the doped Cr ions causes the PT, similar to the high-pressure-induced PT in AlN. Post the PT, the r -Al 1-x Cr x N thin film continues to exhibit compressive residual stress, indicating that such sustained stress may also play a role in stabilizing the metastable r -Al 1-x Cr x N phase. The structural distortion and the PT also affected the optical absorption characteristics of the w -Al 1-x Cr x N thin films. The w -Al 1-x Cr x N exhibit a direct inter-band transition and the band gap ( E g ) decreases from ∼ 6.06 eV for pure w -AlN to ∼ 4.15 eV for w -Al 0.73 Cr 0.27 N. After the PT, the r -Al 0.61 Cr 0.39 N thin film, on the other hand, exhibits an indirect inter-band transition with an E g of ∼ 1.84 eV. In addition to the change in E g , a prominent defect band appears at ∼ 4 eV at low Cr% and another band appears at ∼ 0.98 eV at higher Cr%.
materials science, multidisciplinary
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