Quantum capacitance of the monolayer graphene

M.V.Cheremisin

DOI: https://doi.org/10.1016/j.physe.2015.01.018

2013-09-13

Abstract:The quantum capacitance of the monolayer graphene for arbitrary carrier density, magnetic field and temperature is found. The density dependence of the quantum capacitance is analyzed for magnetic field(temperature) is fixed(varied) and vice versa. The theory is compared with the experimental data.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is about the quantum capacitance characteristics of single - layer graphene under different conditions. Specifically, the author has studied the following problems:

1. **Quantum capacitance under arbitrary carrier density, magnetic field, temperature and Landau level (LL) broadening conditions**:
- The author calculated the quantum capacitance of single - layer graphene under these conditions and analyzed the influence of carrier density on the quantum capacitance when the magnetic field (temperature) is fixed (varies), and vice versa.

2. **Splitting of Landau level energy spectra induced by high magnetic fields**:
- The splitting phenomenon of Landau level energy spectra under high magnetic fields was studied.

3. **Comparison between theoretical and experimental data**:
- The theoretical results were compared with the experimental data to verify the validity of the theoretical model.

### Specific problems and solutions

- **Definition and calculation of quantum capacitance**:
The quantum capacitance \(C_q\) is defined as:
\[
C_q=\frac{e}{d\mu}\frac{dQ}{dU}
\]
where \(Q\) is the total charge density, \(U\) is the gate voltage, and \(\mu\) is the Fermi level.

- **Quantum capacitance in the absence of a magnetic field**:
In the absence of a magnetic field, the thermodynamic potentials of electrons and holes were calculated by the Gibbs statistical method:
\[
\Omega_e = - kT\sum_k\ln\left(1 + e^{\frac{\mu - |E(k)|}{kT}}\right)
\]
\[
\Omega_h=\Omega_e(-\mu, T)
\]
Then the carrier concentration was obtained:
\[
N =-\left(\frac{\partial\Omega_e}{\partial\mu}\right)_{T, P}=\left(\frac{\partial\Omega_h}{\partial\mu}\right)_T
\]
Using the density of states of graphene \(D_0(E)=\frac{2|E|}{\pi\hbar^2v^2}\), the relationship between carrier concentration and Fermi level can be further deduced.

- **Quantum capacitance in the presence of a magnetic field**:
In the presence of a magnetic field, the energy spectrum is given by the formula:
\[
E_N=\pm\hbar v\sqrt{\frac{2N}{\lambda_B}}
\]
where \(\lambda_B = \sqrt{\frac{\hbar c}{eB}}\) is the magnetic length, and \(N = 0, 1, 2,\ldots\) is the Landau level number. By considering the four - fold degenerate Landau levels, the quantum capacitance was calculated:
\[
C_q=\frac{e^2\Gamma}{kT}\left[\sum_{N = 1}^{\infty}\frac{\cosh(\varepsilon_N)\cosh(\xi)+ 1}{(\cosh(\varepsilon_N)+\cosh(\xi))^2}+\frac{1}{\cosh^2\left(\frac{\xi}{2}\right)}\right]
\]
where \(\varepsilon_N=\frac{|E_N|}{kT}=\sqrt{4N\vartheta}\), \(\vartheta=\frac{\hbar v\sqrt{2}}{kT\lambda_B}\) is the normalized cyclotron energy.

- **Influence of Landau level broadening**:
Considering the Landau level broadening caused by carrier scattering, a Gaussian - form density of states was used:
\[
D(E) = 4\Gamma\sum_{N = 0}^{\infty}\frac{1}{\sqrt{2\pi\s