Abstract:In the past years, light-emitting devices (LEDs) based on erbium (Er)-doped insulators or wide-bandgap semiconductors have received intensive attention because the intra-4f transition (4I13/2→4I15/2) of Er3+ ions at ～ 1540 nm has potential applications in the optical interconnection for silicon-based circuits. The LEDs with rare-earth (RE)-doped SiOx (x ≤ 2) or SiNx (x ≤ 4/3) films have been well investigated as the silicon-compatible emitters. However, they suffer difficulty in injecting current and easing fatigue. In this context, the LEDs with RE-doped oxide semiconductors have been extensively investigated out of research interest in recent years. Among the oxide semiconductors, TiO2 is a desirable host for RE-doping because it is transparent for visible and infrared light, and cost-effective, and has considerably high RE solubility. In our previous work (Zhu C, Lü C Y, Gao Z F, Wang C X, Li D S, Ma X Y, Yang D R 2015 Appl. Phys. Lett. 107 131103), we have realized erbium (Er)-related visible and near-infrared (～ 1540 nm) electroluminescence (EL) from the LED with a structure of ITO/TiO2:Er/SiO2/n+-Si, in which TiO2:Er refers to the Er-doped TiO2 film as the light-emitting layer. In this work, we co-dope ytterbium (Yb) into the TiO2:Er film in the aforementioned LED to significantly enhance the Er-related visible and near-infrared EL. It is revealed that a certain amount of Yb co-doping enables the TiO2:Er film to transform its crystal phase from anatase to rutile. Such a phase transformation reduces the symmetry of crystal field surrounding the Er3+ ions incorporated into the TiO2 host. Moreover, the substitution of over-sized Yb3+ ions for Ti4+ ions in the TiO2 host leads to the distortion of the crystal field around the Er3+ ions. The aforementioned symmetry-reduction and distortion of the crystal field increase the probabilities of the intra-4f transitions of Er3+ ions. Due to the aforementioned reason, the Yb co-doping into the TiO2:Er film remarkably enhances the EL from the corresponding LED. It is believed that the strategy of Yb-codoping can be adopted to enhance the EL from the LEDs with other RE-doped TiO2 films.

Effective infrared emission of erbium ions doped inorganic lead halide perovskite quantum dots by sensitization of ytterbium ions

Near-Infrared Photoluminescence from Ytterbium- and Erbium-Codoped CsPbCl3 Perovskite Quantum Dots with Negative Thermal Quenching

Synergistic Enhancement of Near-Infrared Emission in CsPbCl3 Host via Co-Doping with Yb3+ and Nd3+ for Perovskite Light Emitting Diodes

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Boosting the 1540 nm near-infrared luminescence of Er3+ doped double perovskites via cross-relaxation and energy transfer

Tunable Quantum Dot Arrays As Efficient Sensitizers for Enhanced Near-Infrared Electroluminescence of Erbium Ions.

Efficient Near-Infrared Electroluminescence from Lanthanide-Doped Perovskite Quantum Cutters

Near-infrared-triggered photon upconversion tuning in all-inorganic cesium lead halide perovskite quantum dots

Near-infrared photo-responsive Er3+-K+ co-doped Y2O3 phosphors with enhanced UC luminescence

Near-Infrared Light-Induced Photoresponse in Er3+/Li+-Codoped Y2O3/Poly(methyl Methacrylate) Composite Film

Synergistic Effect of Indium Doping and Chlorine Surface Passivation on CsPbI3 Perovskite Quantum Dots for Deep-Red Light-Emitting Devices.

Near‐Unity Quantum Yield and Superior Stable Indium‐Doped CsPbBrxI3−x Perovskite Quantum Dots for Pure Red Light‐Emitting Diodes

Unveiling Local Electronic Structure of Lanthanide‐Doped Cs2NaInCl6 Double Perovskites for Realizing Efficient Near‐Infrared Luminescence

Highly efficient visible and near-infrared luminescence of Sb3+, Tm3+ co-doped Cs2NaYCl6 lead-free double perovskite and light emitting diodes