Abstract:The focal plane of Athena's WFI consists of spectroscopic single photon X-ray detectors that contain arrays of DEPFETs (DEpleted P-channel Field-Effect Transistor) as well as ASICs that are used for steering, readout and analog signal shaping. These components have to be examined regarding the effect of ionizing radiation. A Total Ionizing Dose (TID) test was done with prototype detector modules with 64x64 DEPFETs and one SWITCHER and VERITAS ASIC each. The current design of the WFI detector head features a proton shield equivalent to 4 cm of aluminum in order to prevent a strong increase of leakage current in the fully depleted 450 $\mu$m thick bulk of the sensor. This keeps the expected doses and dose rates during the nominal mission relatively low ($\sim$5 Gy). It is nevertheless important to study the current system in a dedicated TID test in order to exclude unforeseen effects and to study any radiation related changes that can have an effect on the very sensitive readout chain and the detector performance. The combination of low doses, low dose rates, low operating temperature (<-60°C) but high sensitivity on small changes of the threshold voltages represent somehow unusual boundary conditions in comparison to TID tests for standard radiation hard electronic components. Under these circumstances it was found beneficial to do the test in our own laboratory with an X-ray source in order to realize irradiation during nominal operation conditions. Furthermore, it facilitated to take annealing effects into account. Reasonably accurate dosimetry is achieved by measuring the X-ray spectrum and intensity with the device under test. After irradiation to a total dose of 14 Gy and subsequent annealing the threshold voltage of the DEPFETs were shifted by a mean value of 80 mV, the performance remained unchanged apart from a slight increase in readout noise by 10%.

Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad

Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment

DEPFET Active Pixel Sensors for the Belle II Experiment

DEPFET pixels as a vertex detector for the Belle II experiment

DEPFET Vertex Detectors: Status and Plans

The Belle II DEPFET vertex detector: current status and future plans

A 64k pixel CMOS-DEPFET module for the soft X-rays DSSC imager operating at MHz-frame rates

Impact of 60Co-Γ Irradiation Pre-treatment on Single-Event Burnout in N-Channel Power VDMOS Transistors

Super KEKB and Belle II: Status of the KEK Super B Factory

Total ionizing dose test with DEPFET sensors for Athena's WFI

Upgrade of Belle II Vertex Detector with CMOS Pixel Technology

Study of X-ray radiation damage in the AGIPD sensor for the European XFEL

Plastic scintillator dosimetry of ultrahigh dose-rate 200 MeV electrons at CLEAR

Development of PPDs to detect scintillation light from liquid xenon

Nuclear photonics at ultra-high counting rates and higher multipole excitations

Optimization of the Radiation Hardness of Silicon Pixel Sensors for High X-ray Doses using TCAD Simulations

Front-end electronic readout system for the Belle II imaging Time-Of-Propagation detector

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Radiation Hardness tests with neutron flux on different Silicon photomultiplier devices

Irradiation study of UV Silicon Photomultipliers for the Mu2e Calorimeter