Abstract:The dielectric function is one of the most important quantities that describes the electrical and optical properties of solids. Accurate modeling of the frequency-dependent dielectric function has great significance in the study of the long-range van der Waals (vdW) interaction for solids and adsorption. In this work, we calculate the frequency-dependent dielectric functions of semiconductors and insulators using the $GW$ method with and without exciton effects, as well as efficient semilocal density functional theory (DFT), and compare these calculations with a model frequency-dependent dielectric function. We find that for semiconductors with moderate band gaps, the model dielectric functions, $GW$ values, and DFT calculations all agree well with each other. However, for insulators with strong exciton effects, the model dielectric functions have a better agreement with accurate $GW$ values than the DFT calculations, particularly in high-frequency region. To understand this, we repeat the DFT calculations with scissors correction, by shifting DFT Kohn-Sham energy gap to match the experimental band gap. We find that scissors correction only moderately improves the DFT dielectric function in low-frequency region. Based on the dielectric functions calculated with different methods, we make a comparative study by applying these dielectric functions to calculate the vdW coefficients ($C_3$ and $C_5$) for adsorption of rare-gas atoms on a variety of surfaces. We find that the vdW coefficients obtained with the nearly-free electron gas-based model dielectric function agree quite well with those obtained from the $GW$ dielectric function, in particular for adsorption on semiconductors, leading to an overall error of less than 7% for $C_3$ and 5% for $C_5$. This demonstrates the reliability of the model dielectric function for the study of physisorption.

Dielectric function of the semiconductor hole liquid: Full frequency and wave vector dependence

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Non-Fermi-liquid behavior for holes in doped two-dimensional antiferromagnets

Frequency-dependent dielectric function of semiconductors with application to physisorption

Reconstruction of Bloch wavefunctions of holes in a semiconductor

Velocity-field characteristics of semiconductors with negative- effective- mass

Nonequilibrium total dielectric function approach to the electron Boltzmann equation for inelastic scattering in doped polar semiconductors

Insulating and metallic phases in the one-dimensional Hubbard-Su-Schrieffer-Heeger model: Insights from a backflow-inspired variational wave function

Single-hole Wave Function in Two Dimensions: A Case Study of the Doped Mott Insulator

Resonant Tunneling of Holes in Double-Barrier Structures in the Presence of an In-Plane Magnetic Field

Hole Migration and Optically Induced Charge Depletion in GaSb/GaAs Wetting Layers and Quantum Rings

Model of DC tunneling conductivity via hydrogen‐like impurities in heavily doped compensated semiconductors

Thermodynamic behavior of correlated electron-hole fluids in van der Waals heterostructures

Polaronic correlations from optimized ancilla wave functions for the Fermi-Hubbard model

Dielectric Properties of the Quasi-Two-Dimensional Electron Liquid in Heterojunctions

Negative Long Wavelength Dielectric Constant in Semiconductor Qws

Dielectric Function, Friedel Oscillation And Plasmons In Weyl Semimetals

Anisotropic Hole Drift Velocity in 4H-SiC

Dielectric losses in metals

Comparative Study of the Insulator-Hall Liquid-Insulator Transitions: Composite Boson Picture vs Composite Fermion Picture

Cubic anisotropy of hole Zeeman splitting in semiconductor nanocrystals