Abstract:Motivated by recent experiments on Si/SiGe quantum wells with a co-design of high electron mobility and large valley splitting [B. Paquelet Wuetz, et al., Nature Communications 14, 1385 (2023); D. D. Esposti, et al., <a class="link-https" data-arxiv-id="2309.02832" href="https://arxiv.org/abs/2309.02832">arXiv:2309.02832</a>], suitable for a Si-based spin qubit quantum computing platform, we examine the role of disorder by theoretically calculating mobility and quantum mobility from various scattering mechanisms and their dependence on the electron density. At low electron densities $n_e < 4 \times 10^{11}$ cm$^{-2}$, we find that mobility is limited by remote Coulomb impurities in the capping layer, whereas interface roughness becomes the significant limiting factor at higher densities. We also find that alloy disorder scattering is not a limiting mechanism in the reported high-mobility structures. We estimate the critical density of the disorder-driven low-density metal-insulator transition using the Anderson-Ioffe-Regel localization criterion and qualitatively explain the breakdown of the Boltzmann-Born theory at low densities. We also estimate the critical density by considering inhomogeneous density fluctuations induced by long-range Coulomb disorder in the system, and find a larger critical density compared to the one obtained from the Anderson-Ioffe-Regel criterion. For quantum mobility, our calculation suggests that remote and distant background impurities are likely the limiting scattering sources across all density. Future measurements of quantum mobility should provide more information on the distribution of background impurities inside the SiGe barriers. Moreover, we extend our theoretical analysis to the effect of quantum degeneracy on transport properties and predict the mobility and the critical density for the metal-insulator transition in spin-polarized high-mobility structures under an external parallel magnetic field.

Stark-Effect Scattering in Rough Quantum Wells

Self-consistent Simulation of Stark Shift of Intersubband Transition in Modulation-Doped Step Quantum Wells

Electric field induced tuning of electronic correlation in weakly confining quantum dots

Effect of Rough Walls on Transport in Mesoscopic $^3$He Films

Field-Dependent THz Transport Nonlinearities in Semiconductor Nano Structures

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

Electron-Spin Beat Susceptibility of Excitons in Semiconductor Quantum Wells

Probing the Sensitivity of Electron Wave Interference to Disorder-Induced Scattering in Solid-State Devices

Effect of an Electric Field on Electron-Interface-Phonon Scattering in A Graded Quantum Well

Electric Field Effect on the Linear and Nonlinear Intersubband Refractive Index Changes in Asymmetrical Semiparabolic and Symmetrical Parabolic Quantum Wells

Scattering Dynamics and Boundary States of a Non-Hermitian Dirac Equation

Effects of Interface Roughness and Embedded Nanostructures on Device Properties

Some Studies on the Effect of Size on Various Semiconductor Structure used in Device Design

High-field transport in semiconductor superlattices for interacting Wannier-Stark levels

Electron Scattering in GaAs/InGaAs Quantum Wells Subjected to an In-Plane Magnetic Field

Research on the Quantum confinement of Carriers in the Type-I Quantum Wells Structure

Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells

Quantum-confined Magneto-Stark Effect in Diluted Magnetic Semiconductor Coupled Quantum Wells

Quantum Confined Stark Effect on Intersubband Transitions in Strained Wurtzite Nitride Quantum Wells

Lack of Quenching for the Resonant Transmission Through an Inhomogeneously Oscillating Quantum Well

Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure