Abstract:Wide-bandgap (WBG) semiconductors have promising applications in power electronics due to their high voltages, radio frequencies, and tolerant temperatures. Among all the WBG semiconductors, SiC has attracted attention because of its high mobility, high thermal stability, and high thermal conductivity. However, the interfaces between SiC and the corresponding substrate largely affect the performance of SiC-based electronics. It is therefore necessary to understand and design the interfacial thermal transport across the SiC/substrate interfaces, which is critical for the thermal management design of these SiC-based power electronics. This work systematically investigates heat transfer across the 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces using non-equilibrium molecular dynamics simulations and diffuse mismatch model. We find that the room temperature ITC for 3C-SiC/Si, 4H-SiC/Si, and 6H-SiC/Si interfaces is 932 MW/m2K, 759 MW/m2K, and 697 MW/m2K, respectively. We also show the contribution of the ITC resulting from elastic scatterings at room temperature is 80% for 3C-SiC/Si interfaces, 85% for 4H-SiC/Si interfaces, and 82% for 6H-SiC/Si interfaces, respectively. We further find the ITC contributed by the elastic scattering decreases with the temperature but remains at a high ratio of 67%~78% even at an ultrahigh temperature of 1000 K. The reason for such a high elastic ITC is the large overlap between the vibrational density of states of Si and SiC at low frequencies (< ~ 18 THz), which is also demonstrated by the diffuse mismatch mode. It is interesting to find that the inelastic ITC resulting from the phonons with frequencies higher than the cutoff frequency of Si (i.e., ~18 THz) can be negligible. That may be because of the wide frequency gap between Si and SiC, which makes the inelastic scattering among these phonons challenging to meet the energy and momentum conservation rules.

Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films

Effect of electron-phonon interaction on lattice thermal conductivity of SiGe alloys

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Effect of Electron-Phonon Interaction on Nonequilibrium Transport in Quantum Dot Systems

Direct observation of large electron–phonon interaction effect on phonon heat transport

Phonon Knudsen flow in nanostructured semiconductor systems

Nanoscale imaging of phonon dynamics by electron microscopy

Effects of Electron-Phonon Interaction on Quantum Transport Through Single Molecule Transistor

The Effect of the Electron–phonon Coupling on the Thermal Conductivity of Silicon Nanowires

Impact of electron-phonon interactions on quantum-dot cavity quantum electrodynamics

Influence of Electron–Phonon Interaction on the Lattice Thermal Conductivity in Single‐Crystal Si

Role of Elastic Phonon Couplings in Dictating the Thermal Transport across Atomically Sharp SiC/Si Interfaces

Thermal Interface Conductance between Aluminum and Silicon by Molecular Dynamics Simulations

Enhanced Electron Coherence in Atomically Thin Nb3SiTe6

Importance of electron-phonon coupling near the electron-liquid to Wigner-crystal transition in two-dimensional atomically thin materials

Electric-Field-Dependent Intersubband Transition Via Optical Phonons In A Doped-Thin-Layer Inserted Quantum-Well Structure

Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6

Confinement Effect of Optical Phonons in Si–Ge Alloy Nanocrystals

Electron-phonon Scattering Inga1−xal

Monte Carlo simulations for phonon transport in silicon nanomaterials

Fröhlich Electron-Interface Optical Phonon Interactions in N-Layer Low-dimensional Coupling Quantum Structures