Dynamic and controlled stretching of macroscopic crystalline membranes towards unprecedented levels
T.U. Schülli,E Dollekamp,Z Ismaili,N. Nawaz,T. Januel,T. Billo,P. Brumund,H. Djazouli,S.J. Leake,M. Jankowski,V. Reita,M. Rodriguez,L. André,A. Aliane,Y.M. Le Vaillant
DOI: https://doi.org/10.1016/j.mtadv.2024.100489
IF: 9.918
2024-04-19
Materials Today Advances
Abstract:Imposing and controlling strain in materials such as semiconductors or ferroelectrics is a promising way to obtain new or enhance existing properties. Although the field of strain engineering has seen a rapid expansion over the last two decades, straining semiconductor membranes over large areas remains a challenge. A generic way of tuning strain and hence band structure and electric or magnetic properties of any crystalline material can be obtained by compression of a composite structure involving poorly compressible elastomers. Mechanically similar to the principle of a hydraulic press, this work proposes a device and describes analytically a methodology to easily strain macroscopic membranes up to unprecedented values. Using in-situ X-ray diffraction and Raman spectroscopy, we tuned the biaxial strain in silicon membranes up to a value of 2.1 %, paving the way for new studies in the field of strain related physics, from semiconductors to perovskite oxide multiferroics.
materials science, multidisciplinary