Shashank Shekhar,Mikhail Erementchouk,Michael N. Leuenberger,Saiful I. Khondaker
Abstract:We demonstrate that in a densely packed aligned array of single walled carbon nanotubes, the breakdown of one nanotube leads to a highly correlated breakdown of neighboring nanotubes, thereby producing a nano-fissure. We show that the origin of the correlation is the electrostatic field of the broken nanotubes that produces locally inhomogeneous current and Joule heating distributions in the neighboring intact nanotubes triggering their breakdowns in the vicinity of the broken nanotubes. Our results suggest that the densely aligned array behaves like a correlated solid.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in a high - density array of single - walled carbon nanotubes (SWNTs), when an electrical breakdown occurs in one nanotube, whether it will lead to the correlated breakdown phenomenon of neighboring nanotubes. Specifically, the researchers are concerned with:
1. **The influence of high - density arrangement**: When the arrangement density of carbon nanotubes increases to about 30 per micron, whether the electrical breakdown of one nanotube will trigger a chain reaction of surrounding nanotubes, forming nano - fissures.
2. **The correlated breakdown mechanism**: What is the cause of this correlated breakdown? The researchers hypothesize that it is due to the electrostatic field generated by the broken nanotube, which leads to a locally non - uniform current distribution and Joule heating effect, thus triggering the breakdown of neighboring nanotubes.
3. **The impact on electronic devices**: Understanding this correlated breakdown phenomenon is crucial for the development of fault - tolerant nano - electronic circuits based on carbon nanotube arrays. In particular, this phenomenon may affect the device performance in future digital and analog electronics, radio - frequency applications, field - effect transistors and other fields.
### Research background
Carbon nanotubes are considered as ideal building materials for future electronic devices because of their excellent electrical properties (such as high mobility, near - ballistic conductivity and resistance to electromigration). However, in practical applications, it is very difficult to control the chirality of a single nanotube. Therefore, nanotube arrays are usually used to average individual differences, provide larger currents and reduce noise. In addition, since both metallic and semiconducting nanotubes exist simultaneously in the array, it is also very important to selectively remove metallic nanotubes to obtain good transistor characteristics.
### Key issues
Previous studies assumed that a single nanotube could be broken down without affecting neighboring nanotubes, and only metallic nanotubes could be selectively removed. However, these assumptions have not been verified in high - density (> 7 SWNT/µm) arrays. Therefore, understanding the electrical breakdown behavior of carbon nanotube arrays under high - density arrangement and their correlated breakdown mechanism is of great significance for ensuring the reliability and fault - tolerance of nanotube arrays in electronic circuits.
### Main findings
Through experimental and theoretical analysis, the researchers found that:
- When the arrangement is low - density (< 8 SWNT/µm), the breakdown of nanotubes is random and uncorrelated.
- When the arrangement is high - density (> 8 SWNT/µm), the breakdown of one nanotube will trigger the correlated breakdown of neighboring nanotubes, forming continuous nano - fissures.
- This correlated breakdown is caused by the electrostatic field generated by the broken nanotube, which changes the current distribution in neighboring intact nanotubes, leading to a locally non - uniform Joule heating effect, thus triggering the breakdown of neighboring nanotubes.
### Conclusion
The research shows that high - density arrays of carbon nanotubes exhibit behavior similar to "correlated solids", which has important implications for the future development of fault - tolerant nano - electronic circuits based on carbon nanotube arrays.