Facile preparation of fully amorphous bulk PbO-Ga2O3 system for direct photon-charge conversion X-ray detector with low dark current and high photocurrent

Wen Zhang,Hui Sun,Zheng Tang,Cheng Wang,Huaipu Zhu,Qianfa Su,Tixian Zeng,Dingyu Yang,Xinghua Zhu,Shibin Zhou
DOI: https://doi.org/10.1016/j.ceramint.2023.01.104
IF: 5.532
2023-05-01
Ceramics International
Abstract:An amorphous state makes the material free of interface and ensures the overall uniformity of the material and device, to the benefit of large-area electronic devices, such as amorphous silicon and indium gallium zinc oxide display devices and amorphous selenium flat panel detectors. Elements with high atomic number endow the PbO-Ga2O3 system materials with high X-ray absorption coefficients, and wide band gap leading to a low dark current and high signal-to-noise ratio. These advantages are in line with the criteria for a practical X-ray detector development. Herein, the direct photon-charge conversion X-ray detectors based on fully amorphous bulk PbO-Ga2O3 system [(PbO) x (Ga2O3)1-x (x = 0.698, 0.747, 0.761, 0.789)] was fabricated by using high-temperature melt quenching method. Under a fixed electric field of 100 V/mm and X-ray irradiation dose rate of 0.57 μGy ms−1, the dark current as low as 1.1 pA mm−2, photocurrent up to 1600 pA mm−2, signal-to-noise ratio up to 800, comparable sensitivity as 2.02 μC Gy−1 cm−2 of the as fabricated X-ray detector were obtained. All the results suggest that amorphous bulk PbO-Ga2O3 system materials are potential candidates for developing of direct photon-charge conversion X-ray detectors.
materials science, ceramics
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