Abstract:Molybdenum disulfide (MoS2) is a semiconducting transition metal dichalcogenide material. This two-dimensional (2D) layered material has a band gap ranging from 1.3 eV in bulk form (indirect) to 1.88 eV as a monolayer (direct). The material has been suggested as a potential candidate for applications in nanoelectronics, optoelectronics and neuromorphic computing [1]–[4]. In this talk, the principles of scalable growth through thermal conversion of metals and metal-organic vapor phase growth will be discussed [5], [6]. These materials are then integrated into the silicon technology platform to demonstrate device applications. Conventional field effect transistors with MoS2 channels show promising characteristics. In addition, ion-based plasticity promises to enable memristive functionality on MoS2 devices. In particular, vertically aligned MoS2 layers allow the tuning of energy barriers at MoS2/semiconductor Schottky junctions through mobile ions [7], [8]. These ions (OH-) likely originate from catalytic splitting of water molecules. Spectral response measurements of MoS2 based devices provide insight into the band structure and beyond, as photodetectors based on MoS2/silicon/graphene and MoS2/amorphous silicon heterostructures show peculiar responsivity in the infrared regime [9]–[11]. Acknowledgements The authors acknowledge funding through the European Union’s Horizon 2020 research and innovation programme under grant agreements 785219 (Graphene Flagship) and 829035 (QUEFORMAL), the German BMBF grant NEUROTEC (16ES1134) and the DFG projects MOSTFLEX (407080863) and ULTIMOS2 (412113712). References [1] K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically Thin MoS2: A New Direct-Gap Semiconductor,” Phys. Rev. Lett., vol. 105, no. 13, p. 136805, Sep. 2010. [2] B. Radisavljevic and A. Kis, “Mobility engineering and a metal–insulator transition in monolayer MoS2,” Nat. Mater., vol. 12, no. 9, pp. 815–820, Sep. 2013. [3] A. Bablich, S. Kataria, and M. C. Lemme, “Graphene and Two-Dimensional Materials for Optoelectronic Applications,” Electronics, vol. 5, no. 1, p. 13, Mar. 2016. [4] V. K. Sangwan et al., “Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide,” Nature, vol. 554, no. 7693, pp. 500–504, Feb. 2018. [5] S. Kataria et al., “Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation,” Adv. Mater. Interfaces, vol. 4, no. 17, p. 1700031, Sep. 2017. [6] M. Marx et al., “Large-area MoS2 deposition via MOVPE,” J. Cryst. Growth, vol. 464, pp. 100–104, Apr. 2017. [7] M. Belete et al., “Dielectric Properties and Ion Transport in Layered MoS2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics,” ACS Appl. Nano Mater., vol. 1, no. 11, pp. 6197–6204, Nov. 2018. [8] M. Belete et al., “Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity,” arXiv:1911.06032, 2019. [9] C. Yim et al., “Heterojunction Hybrid Devices from Vapor Phase Grown MoS2,” Sci. Rep., vol. 4, Jun. 2014. [10] M. Belete et al., “Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes,” presented at the European Solid-State Device Research Conference (ESSDERC), Krakow, Poland, 2019. [11] A. Bablich et al., “Few-Layer MoS2/a-Si:H Heterojunction Pin-Photodiodes for Extended Infrared Detection,” ACS Photonics, vol. 6, no. 6, pp. 1372–1378, Jun. 2019.

(Invited) Transferable Organic Semiconductor Nanosheets for Van Der Waals Heterojunction Devices

Wafer scale synthesis of organic semiconductor nanosheets for van der Waals heterojunction devices

A van der Waals pn heterojunction with organic/inorganic semiconductors

Crystallization from a Droplet: Single-Crystalline Arrays and Heterojunctions for Organic Electronics

Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2

Charge‐Transfer‐Controlled Growth of Organic Semiconductor Crystals on Graphene

On-water Surface Synthesis of Electronically Coupled 2D Polyimide-Mos 2 Van Der Waals Heterostructure

Organic Semiconductor Crystal Engineering for High‐Resolution Layer‐Controlled 2D Crystal Arrays

Solvent‐Free Coating of Organic Semiconductor Membranes with Centimetric Crystalline Domains

A Dry-Transfer Method for Molecular Monolayer Crystals Toward Flexible High-Performance Organic Field-Effect Transistors

A General Vapor‐Induced Coating Approach for Layer‐controlled Organic Single Crystals

Direct Writing of Aligned Conjugated Polymer Micro-Ribbons for High-Performance Organic Electronics

Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors

When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures

(Invited) Transistors, Memristors and Optoelectronics Based on Two-Dimensional Molybdenum Disulfide

Wafer-Scale Growth and Transfer of High-Quality MoS2 Array by Interface Design for High-Stability Flexible Photosensitive Device

Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors

Nanoscale heterogeneous distribution of surface energy at interlayers in organic bulk-heterojunction solar cells

Intercalation and hybrid heterostructure integration of two-dimensional atomic crystals with functional organic semiconductor molecules

Facile fabrication of 2D material multilayers and vdW heterostructures with multimodal microscopy and AFM characterization

Solution-processable 2D semiconductors for high-performance large-area electronics