Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Modelling of Silicon-on-Sapphire Slot Waveguide with a Buried Gold Layer for Enhanced Evanescent Field

A Substrate-Integrated Evanescent-Mode Waveguide Filter with Nonresonating Node in Low-Temperature Co-Fired Ceramic

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Field Enhancement of Gold Optical Nanoantennas Mounted on a Dielectric Waveguide

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Enhanced Evanescent Field Spectroscopy at Waveguide Surfaces using High Index Nano and Near-Nano Layers

Si3N4 – SiO2 Based Curve Slot Waveguide for High Confinement Factor and Low Mode Effective Area along with Biosensing Application

Suspended Slot Membrane Waveguide Based on Germanium-on-Silicon-on-Insulator at λ = 4.23 μm for CO2 Monitoring

Enhanced Air Microcavity of Channel SPP Waveguide HALby Graphene Material

Integration of short gold nanoparticles chain on SOI waveguide

Ultra-Broadband Nonlinearity Enhancement Based on a Novel Graphene-Silicon Hybrid Waveguide: Structure Design and Theoretical Analysis.

Silicon/silicon-rich Nitride Hybrid-Core Waveguide for Nonlinear Optics

Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer

Interferometric near-field characterization of plasmonic slot waveguides in single- and poly-crystalline gold films

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Extraordinary evanescent field confinement waveguide sensor for mid-infrared trace gas spectroscopy

Compact hybrid plasmonic slot waveguide sensor with a giant enhancement factor for surface-enhanced Raman scattering application

Surface-enhanced Raman scattering using nanoporous gold on suspended silicon nitride waveguides.

Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications

Sandwiched Hybrid Waveguide Platform for Integrated Photonics Application