Abstract:In this article, gate bias (V-GS,V-stress) effects on the hydrogen (H)-terminated polycrystalline diamond field effect transistors (FETs) are investigated. A 7- to 8-nmAlOxinterface layer is found between the Al metal and polycrystalline diamond by electrical and microstructure characterization. The threshold voltage (VTH) and ON-resistance (Ron) exhibit different changing trends under varying V-GS,V-stress. Specifically, a bidirectional shift of VTH is observed during gate bias stress. To explain the distinct behavior of V-TH shift and R-ON change occurring under gate bias, holes trapping by defects, H-motion, and sur-face leakage electron trapping models are proposed. Under negative gate bias, holes in 2-D hole gas channel are captured by the interface states and/or defects in the AlOx layer, resulting in a negative shift of V-TH. Simultaneously, H-motion in the AlOx layer under gate bias leads to the generation of negative charges. Additionally, electrons in the surface leakage path are trapped by defects on the diamond surface in the access region, leading to decreased access region resistance. For a harsh gate bias, a high density of new defects is generated, and a defect density changes from 4.9 x 10(21)ev(-1)cm(-3)for the fresh device to 5.1 x 10(23)ev(-1)cm(-3)for the device after gate bias(V-GS,V-stress= -4 V) which is characterized by using the low-frequency noise measurements. These findings high-light the importance of surface passivation and high-quality gate dielectric in suppressing charging effects and new defect generation in H-terminated polycrystalline diamond FETs, ultimately contributing to device stability.

Negative constant voltage stress-induced threshold voltage instability in hydrogen-terminated diamond MOSFETs with low-temperature deposited Al 2 O 3

Negative Bias Temperature Instability (NBTI) in Deep Sub-Micron P/sup +/-Gate Pmosfets

Threshold Voltage Instability of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Hafnium Based Dielectrics

Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS

The Transition of Threshold Voltage Shift of Al$_{\text{2}}$O$_{\text{3}}$/Si$_{\text{3}}$N$_{\text{4}}$ AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

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Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

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Negative bias temperature instability of HfN/HfO2 gated p-MOSFETs

Poststress Recovery Mechanism Of The Negative Bias Temperature Instability Based On Dispersive Transport

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

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Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

Gate Bias Effects on Hydrogen-Terminated Polycrystalline Diamond FETs

Experimental Investigation on the Instability for NiO/β-Ga2O3 Heterojunction-Gate FETs under Negative Bias Stress