Vivek Venkataraman,Susheel Nawal,M. Jagadesh Kumar
Abstract:For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility with conventional silicon processing. In this work, an analytical model for the output current characteristics (I-V) of nanoscale bulk strained-Si/SiGe MOSFETs, suitable for analog circuit simulation, is developed. We demonstrate significant current enhancement due to strain, even in short channel devices, attributed to the velocity overshoot effect. The accuracy of the results obtained using our analytical model is verified using two-dimensional device simulations.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a simple and accurate current - voltage (I - V) analytical model for nano - scale strained - Si/SiGe MOSFETs for use in analog circuit simulation. Specifically, the model aims to take the following factors into account:
1. **The influence of strain on mobility and velocity overshoot**: Strain can significantly improve the mobility of carriers and lead to the velocity overshoot effect, thereby enhancing the current in short - channel devices.
2. **Avalanche breakdown and impact ionization**: In high - electric - field regions, especially in the saturation region, the avalanche multiplication and ionization effects of carriers need to be considered.
### Key points of the solution
- **Enhancement of low - field mobility**: By introducing strain, the low - field mobility of Si/SiGe MOSFETs is enhanced. Specifically, for different Ge mole fractions \(x\), the electron mobility enhancement factor \(e_n\) is as follows:
\[
e_n =
\begin{cases}
1 & \text{for } x = 0 \\
1.46 & \text{for } x = 0.1 \\
1.68 & \text{for } x = 0.2
\end{cases}
\]
- **Velocity overshoot effect**: In nano - scale devices, due to the large longitudinal electric - field gradient and the fact that the average carrier transit time is comparable to or shorter than the energy relaxation time, the velocity overshoot effect becomes significant. The author proposes a modified velocity expression to describe this effect:
\[
v_{DD}(x) =
\begin{cases}
\frac{\mu_{eff} E_x}{1 + \frac{E_x}{E_{sat}}} & \text{for } E_x \leq E_{sat} \\
v_{sat} & \text{for } E_x > E_{sat}
\end{cases}
\]
where \(E_{sat}=\frac{2v_{sat}}{\mu_{eff}}\), and \(v_{sat} = 10^7 \, \text{cm/s}\) is the saturation velocity.
- **Output current characteristics**: Finally, an output current formula that comprehensively considers the above factors is derived:
\[
I_D =
\begin{cases}
\frac{W C_{ox}}{L} (V_{GS} - V_{th}) \left( V_{DS} + \frac{k_1}{2} V_{DS}^2 \right) & \text{for } V_{DS} \leq V_{DS,sat} \\
\frac{W C_{ox}}{L} (V_{GS} - V_{th}) \left( V_{DS,sat} + \frac{k_1}{2} V_{DS,sat}^2 \right) & \text{for } V_{DS} > V_{DS,sat}
\end{cases}
\]
where \(k_1=\frac{3 \tau_w}{\mu_{eff} L}\), and \(V_{DS,sat}\) is the drain - source voltage when the carriers reach the saturation velocity at the drain.
### Conclusion
The accuracy of this model has been verified by two - dimensional device simulation, and it shows the performance improvement of strained Si/SiGe MOSFETs under different bias conditions and technological parameters. The research shows that even in devices with extremely short channel lengths, the strain - induced enhancement effect is still significant, and non - equilibrium high - field effects such as velocity overshoot contribute greatly to the improvement of current - driving ability.