Abstract:We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Understanding the low mobility and charge - trapping characteristics in chemically reduced graphene oxide (RGO) sheets**. Specifically, by measuring and analyzing the temperature - dependent current - voltage characteristics, the author aims to reveal the nature and density of charge traps in RGO materials. This is of great significance for optimizing reduction techniques and developing high - quality solution - processed graphene devices. ### Main problems and research motivation: 1. **Low mobility and high charge - trap density**: - Due to structural defects and the presence of oxygen functional groups, the electrical properties of RGO materials are far inferior to those of pristine graphene. These problems are mainly manifested as low mobility and high charge - trap density. 2. **Charge - transfer mechanism**: - In order to better understand and optimize the electrical properties of RGO materials, it is necessary to study its charge - transfer mechanism in detail. In particular, the current - voltage characteristics under different temperatures and bias conditions can provide key information about the distribution of charge traps. 3. **Optimization strategy**: - Through quantitative analysis of charge traps, a basis can be provided for developing effective surface modification and defect passivation strategies, thereby improving the electrical properties of RGO materials and making them closer to pristine graphene. ### Research methods: - **Experimental design**: - Prepare RGO samples and assemble them between pre - fabricated gold electrodes by dielectrophoresis (DEP). - Measure the current - voltage characteristics at different temperatures (from 295 K to 77 K). - **Data analysis**: - Analyze the relationship between current density \( J \) and voltage \( V \), especially the changes at different temperatures. - Use the space - charge - limited - conduction (SCLC) model to fit the experimental data to determine the nature and density of charge traps. ### Key findings: - **Ohmic conductive behavior and SCLC behavior**: - At low bias voltages, the conductive behavior exhibits Ohmic characteristics (\( m = 1 \)). - At high bias voltages and low temperatures, the conductive behavior transforms into SCLC, and as the temperature decreases, the influence of trap states gradually increases, resulting in \( m> 2 \). - **Charge - trap density**: - The estimated average trap density is \( 1.75\times 10^{16}\, \text{cm}^{-3} \). - These traps are mainly derived from surface defects and structural disorder, such as C - O bond residues, sp³ - hybridized carbon atoms, and wrinkles. Through these studies, the author hopes to provide theoretical support and experimental basis for future RGO material optimization, thereby promoting the development of high - performance graphene - based electronic devices.

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