Gamma‐Ray‐Induced Photoelectric Field Exacerbating Irradiation Damage in Ceramic Capacitors

Ping Yang,Zenghui Yang,Shuairong Deng,Wei Zhao,Yi Ding,Yongqi Pan,Hang Zhou,Dechao Meng,Su‐Huai Wei
DOI: https://doi.org/10.1002/pssa.202400306
2024-06-05
physica status solidi (a) - applications and materials science
Abstract:Under continuous gamma‐ray irradiation, the capacitance of ceramic capacitors can go through significant changes. Due to the rapid dissipation of the gamma‐ray‐induced photoelectric field, the recombination of photogenerated carriers and the annealing of defects, these changes are underestimated in ex situ measurements. Only in situ measurements can properly represent these changes due to irradiation. Ceramic capacitors are widely used in radioactive environments and are known to take irradiation damages, but most of previous studies of its reliability focus on thermal or electrical issues, and much less is known about the microscopic mechanism of its irradiation damaging process. Herein, it is shown that the capacitance of ceramic capacitors can change significantly under continuous gamma‐ray irradiation. Moreover, it is noticed that ex situ measurements will underestimate the effect comparing with the in situ one. Herein, it is discovered that this difference is due to the gamma‐ray‐induced photoelectric field, which dissipate rapidly in ex situ measurements. While the impact of the photoelectric field on the capacitance can be seen in situ, due to the recombination of photogenerated carriers and annealing of defects after irradiation, ex situ measurements only account for a part of the irradiation damage. This discovery indicates that ex situ measurements, which are prevailing in irradiation damage studies, can miss critical information, and in situ measurements are necessary for revealing the mechanism of the process.
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