Abstract:In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance switching behavior of TiO(2-x) thin films. However, a variety of other thin film materials exhibiting memory resistance effects have also been found to exhibit a memory capacitance effect. This paper proposes a memadmittance (memory admittance) systems model which attempts to consolidate the memory capacitance effects with the memristor model. The model produces equations relating the cross-sectional area of conductive bridges in resistive switching films to shifts in capacitance.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to integrate and interpret the memcapacitance effects and the memristor model observed in thin - film materials. Specifically, the paper proposes a new system model - the memadmittance systems model - to uniformly describe these effects and relates the cross - sectional area of the conductive bridge to the capacitance change through mathematical formulas.
### Background and Problem Description of the Paper
1. **Historical Background**:
- In 1971, Professor Leon Chua from the University of California, Berkeley, proposed the concept of "memristor", which is a new circuit element based on the nonlinear relationship between the time integral of voltage and current.
- In 2008, researchers at HPLabs applied Chua's theory to actual material systems, especially TiO₂ thin films, and found that their resistance - switching behaviors could be explained by the memristor model.
2. **Existing Problems**:
- Although the memristor model has successfully explained the resistance - switching behaviors of some materials, the memcapacitance effect has also been observed in many thin - film materials. This effect has not been detailedly related to specific material parameters yet.
- Existing models mainly focus on the resistance - switching mechanism, while the analysis of capacitance change and its relationship with material parameters is insufficient.
### Goals of the Paper
- **Integrate Memcapacitance and Memristor Effects**: Propose a unified model to explain these two effects, especially in thin - film materials with a metal - insulator - metal (MIM) structure.
- **Establish a Mathematical Model**: By introducing the memadmittance systems model, derive equations that describe the relationships between charge, magnetic flux linkage, voltage, and current, and relate them to specific parameters of the material (such as the cross - sectional area of the conductive bridge, capacitance change, etc.).
- **Apply for Prediction**: Use this model to predict the memcapacitance effects under different materials and electrode geometries, providing theoretical support for understanding material properties and designing new - type storage devices.
### Core Equations of the Mathematical Model
1. **Relationship between Charge, Magnetic Flux Linkage, and Voltage**:
\[
q = q(\phi, v)
\]
where \(q\) is the charge, \(\phi\) is the magnetic flux linkage, and \(v\) is the voltage.
2. **Current Expression**:
\[
i(t) = G(\phi, v)v(t)+C(\phi, v)\frac{dv(t)}{dt}
\]
where \(G(\phi, v)\) and \(C(\phi, v)\) are the admittance and capacitance functions respectively, and are defined as follows:
\[
G(\phi, v)=\frac{\partial q(\phi, v)}{\partial \phi}
\]
\[
C(\phi, v)=\frac{\partial q(\phi, v)}{\partial v}
\]
3. **Representation of State Variables**:
In the presence of common state variables, the above equations can be simplified as:
\[
i(t) = G(w)v(t)+C(w)\frac{dv(t)}{dt}
\]
\[
\frac{dw}{dt}=f(w, v)
\]
where \(w\) is the state variable, and \(f(w, v)\) describes the voltage - dependent ion drift.
4. **Relationship between the Length of the Conductive Bridge and Capacitance Change**:
\[
w_{ON}-w_{OFF}=\left[2\pi\sqrt{\frac{8m_e\phi}{h}}\right]^{-1}\ln\left(\frac{R_{OFF}}{R_{ON}}\right)
\]
\[
C_{OFF}-C_{ON}=\epsilon\frac{A_{cb}}{D - w_{OFF}}
\]