Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

Influence of vacancies on the optical and electronic properties of the rhombohedral In 2 O 3 oxide

Ab Initio Study of A Charged Vacancy in Yttrium Aluminum Garnet (Y3al5o12)

First Principles Study of Vacancy-Solute Complexes in Vanadium

Influence of Oxygen Vacancies on the Electronic and Optical Properties of Zirconium Dioxide from First-Principles Calculations

Oxygen Vacancy Induced Band Gap Narrowing of the Low-Temperature Vanadium Dioxide Phase

First‐principles investigation of the influence of point defect on the electronic and optical properties of α‐Ga2O3

First-Principle Insight Into the Effects of Oxygen Vacancies on the Electronic, Photocatalytic, and Optical Properties of Monoclinic BiVO4(001)

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of Bi4O5Br2: First-Principles Calculations

The effect of vacancy defects on the electronic properties of β-Ga2O3

Electronic and Magnetic Properties of BiFeO 3 with Intrinsic Defects:First-Principles Prediction

Influence of Oxygen Vacancies on the Electronic Structure of Yttrium Oxide

Effects of Oxygen Vacancies and Interfacial Strain on the Metal-Insulator Transition of VO2 Nanobeams.

First-principles calculations of the effect of vacancy defects on the optoelectronic and mechanical properties of the double perovskite Cs2NaInCl6

Influence of Oxygen Vacancy on the Electronic Structure of Cacu3ti4o12 and Its Deep-Level Vacancy Trap States by First-Principle Calculation

First-principles study on the optical spectra of ZrO2 crystal with oxygen vacancy

Bi vacancy formation in BiFeO3 epitaxial thin films under compressive (001)-strain from first principles

First-Principles Calculations of the Electronic Structure and Optical Properties of Yttrium-Doped ZnO Monolayer with Vacancy

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

First-principles study of the effects of Hf doping and different valence state O vacancies on the optoelectronic properties of SnO 2

First-principles study of vacancy-impurity (C, N, O) interactions in vanadium

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors