Bi vacancy formation in BiFeO3 epitaxial thin films under compressive (001)-strain from first principles

Lu Xia,Thomas Tybell,Sverre M. Selbach,Sverre Selbach
DOI: https://doi.org/10.1039/C8TC06608F
IF: 6.4
2019-10-07
Journal of Materials Chemistry C
Abstract:Point defects in BiFeO 3 affect both structural and functional properties. To elucidate the role of single Bi vacancies and Bi-O vacancy pairs we investigate their stability and effect on structural and ferroelectric properties in BiFeO 3 using first principles density functional theory calculations. Compressive strain is shown to stabilize Bi-vacancy formation, and the Bi vacancy enthalpy of formation drops abruptly at the structural transition from rhombohedral R-phase to tetragonal T-phase. For Bi-O vacancy pairs the situation is more complex, albeit stabilization is found under compressive strain. In-plane oriented vacancy pairs are stabilized in the T-phase, while out-of-plane oriented vacancy pairs are destabilized compared to the R-phase. It is shown that single Bi vacancies do not effect the spontaneous polarization, however in-plane Bi-O vacancy pairs reduce the in-plane component of the polarization, resulting in a polarization rotation towards [001]. We also discuss the effect of vacancies on the electronic properties of BiFeO 3 , and show that Bi deficiency is consistent with the experimentally reported p-type conductivity.Abstract text goes here.
materials science, multidisciplinary,physics, applied
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