Effects of broadening and electron overheating in tunnel structures based on metallic clusters

A. V. Babich,V. V. Pogosov
DOI: https://doi.org/10.1134/S1063783410010300
2009-06-26
Abstract:We study the influence of energy levels broadening and electron subsystem overheating in island electrode (cluster) on current-voltage characteristics of three-electrode structure. A calculation scheme for broadening effect in one-dimensional case is suggested. Estimation of broadening is performed for electron levels in disc-like and spherical gold clusters. Within the two-temperature model of metallic cluster and by using a size dependence of the Debye frequency the effective electron temperature as a function of bias voltage is found approximately. We suggest that the effects of broadening and electron overheating are responsible for the strong smoothing of current-voltage curves, which is observed experimentally at low temperatures in structures based on clusters consisting of accountable number of atoms.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in the tunnel structure based on metal clusters, the current - voltage characteristic curve is significantly smoothed at low temperatures due to energy level broadening and overheating of the electron subsystem. Specifically, the author studied the influence of energy broadening in the island electrode (cluster) and overheating of the electron subsystem on the current - voltage characteristics of the three - electrode structure, and proposed a scheme for calculating the broadening effect in the one - dimensional case. To better understand this problem, the following is a specific description of this problem: 1. **Background and Motivation**: - Nanodispersed metal systems are important objects in nanotechnology, and understanding their physical properties has scientific and practical application significance. - When transporting charges in nanoscale tunnel junctions, many effects will accompany, such as Coulomb blockade, energy transfer between electrons and ions, and heating of the junctions. - It has been experimentally observed that at low temperatures, the current - voltage curve in the metal cluster structure with a countable number of atoms has a significant smoothing phenomenon, which has not been fully explained yet. 2. **Research Objectives**: - Analyze two mechanisms: 1. Electron energy level broadening caused by the tunnel effect. 2. Overheating of the electron gas in isolated metal clusters (disk - shaped and spherical) under the action of bias voltage. - Explain the obvious smoothing phenomenon of the Coulomb staircase and the quantum staircase on the current - voltage curve of single - electron devices at low temperatures observed in experiments. 3. **Main Contributions**: - Proposed a one - dimensional scheme for calculating the broadening effect, and estimated the broadening of electron energy levels in disk - shaped and spherical gold clusters. - Using the two - temperature model and the size dependence of the Debye frequency, approximately solved the change of the effective electron temperature with the bias voltage. - It is considered that the energy level broadening and the overheating of the electron subsystem are the reasons for the significant smoothing of the current - voltage curve at low temperatures, and the broadening effect is more important. Through these studies, the author aims to provide a theoretical basis for explaining and understanding the abnormal behavior of current - voltage characteristics at low temperatures in tunnel structures based on metal clusters.