E. Khalaf,P. M. Ostrovsky
Abstract:Electron transport in thin metallic wires and films is strongly influenced by the quality of their surface. Weak localization and magnetoconductivity are also sensitive to the electron scattering at the edges of the sample. We study weak localization effects in a two-dimensional electron gas patterned in the form of a narrow quasi-one-dimensional channel in transverse magnetic field. The most general boundary conditions interpolating between the limits of mirror and diffuse edge scattering are assumed. We calculate magnetoconductivity for an arbitrary width of the sample including the cases of diffusive and ballistic lateral transport as well as the crossover between them. We find that in a broad range of parameters, the electron mobility is limited by the boundary roughness while the magnetotransport is only weakly influenced by the quality of the edges. In addition, we calculate magnetoconductivity for a metallic cylinder in the transverse field and a quasi-two-dimensional metallic film in the parallel field.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the influence of boundary scattering effects on the magnetic transport properties of narrow metal wires and thin films. Specifically, the article explores the manifestation of the weak localization effect in two - dimensional electron gas (2DEG), especially in quasi - one - dimensional channels under a transverse magnetic field. The study considers various boundary conditions from specular scattering to diffuse scattering and calculates the magnetoconductivity under different sample widths, including the diffusive and ballistic transport limits and the transition region between them.
### Research Background
1. **Influence of Quantum Interference on Transport Properties**
- The transport properties of metals at low temperatures are significantly affected by quantum interference.
- One of the most obvious quantum effects is the low - field magnetoresistance, that is, the external magnetic field destroys the interference between coherent electron paths, thereby reducing the resistivity, resulting in negative magnetoresistance (weak localization) or positive magnetoresistance (weak anti - localization).
2. **Limitations of Existing Theories**
- Early studies mainly focused on the diffusive limit ($W \gg l$) and the ballistic limit ($W \ll l$), but in experiments, the sample width $W$ is often close to the electron mean free path $l$, in the transition region between the two.
- Existing theories have difficulty in explaining the experimental results in this transition region, especially the magnetic transport data of materials such as semiconductor nanowires, carbon nanotubes and topological insulators.
### Main Contributions of the Paper
1. **Derivation of General Analytic Expressions**
- The article derives a general analytic expression for magnetoresistance applicable to all experimentally relevant situations, covering the diffusive and ballistic limits and their transition regions.
- It considers mixed - boundary scattering (both specular reflection and diffuse reflection) and introduces a new parameter $\lambda$ to describe the probability ratio of these two scatterings.
2. **Explanation of Experimental Phenomena**
- In certain parameter ranges, the electron mobility may be limited by the boundary roughness, while the magnetoresistance is less sensitive to the edge quality, which helps to explain the inconsistencies in previous experiments.
3. **Extension of the Theoretical Range**
- By considering different geometries (such as quasi - one - dimensional channels and quasi - two - dimensional thin films) and different boundary conditions (specular, diffuse scattering and periodic boundaries), the article provides a more comprehensive theoretical framework to describe the magnetic transport properties.
### Formula Summary
- **Magnetic Scattering Rate**: In the weak magnetic field limit ($l_B \gg \sqrt{Wl}$), the magnetic scattering rate can be expressed as:
\[
\frac{1}{\tau_B}=\frac{W^2 l^2}{\tau l_B^4}g(W / l)
\]
where $g(x)$ is a function containing information about the sample geometry and boundary conditions.
- **Diffusion Coefficient**: For quasi - one - dimensional samples, the diffusion coefficient $D$ can be expressed as:
\[
D = v_0 l\left[1-\frac{(1 - \lambda)^2 l}{\pi W}\int_0^\pi d\phi\sin\phi\cos^2\phi\frac{1 - e^{-W / l\sin\phi}}{1 - \lambda e^{-W / l\sin\phi}}\right]
\]
Through these works, the paper provides a more comprehensive and accurate theoretical framework for explaining and predicting the magnetic transport behavior of narrow metal wires and thin films under different conditions.