Contacting individual Fe(110) dots in a single electron-beam lithography step

Fabien Cheynis,Helge Haas,Thierry Fournier,Laurent Ranno,Wolfgang Wernsdorfer,Olivier Fruchart,Jean-Christophe Toussaint

DOI: https://doi.org/10.1088/0957-4484/20/28/285302

2009-02-23

Abstract:We report on a new approach, entirely based on electron-beam lithography technique, to contact electrically, in a four-probe scheme, single nanostructures obtained by self-assembly. In our procedure, nanostructures of interest are localised and contacted in the same fabrication step. This technique has been developed to study the field-induced reversal of an internal component of an asymmetric Bloch domain wall observed in elongated structures such as Fe(110) dots. We have focused on the control, using an external magnetic field, of the magnetisation orientation within Néel caps that terminate the domain wall at both interfaces. Preliminary magneto-transport measurements are discussed demonstrating that single Fe(110) dots have been contacted.

Materials Science

What problem does this paper attempt to address?

This paper aims to solve the problem of how to use electron - beam lithography (e - beam lithography) to achieve four - probe electrical contacts to self - assembled nanostructures (such as Fe(110) dots) in a single step. Specifically, the researchers have developed a new method that can simultaneously locate and contact a single nanostructure during one electron - beam lithography process, thus avoiding the two - step process in traditional methods where nanostructures need to be located first and then contacted. This method not only improves efficiency but also reduces the technical problems that may be introduced by multi - step operations.

The main challenges mentioned in the paper include:
1. **Precise Location**: Since self - assembled nanostructures are randomly distributed on the sample surface, how to precisely locate these structures is a key issue.
2. **Efficient Contact**: After location, how to achieve electrical contact efficiently and reliably, especially in a four - probe configuration, for magnetoresistance measurement.

To solve these problems, the researchers designed a new technology based on electron - beam lithography. By optimizing imaging conditions and exposure doses, they achieved precise location and contact of a single Fe(110) dot. Preliminary magnetoresistance measurement results show that this method can successfully achieve electrical contact to a single Fe(110) dot and can be used to monitor the reversal process of the internal degrees of freedom of the magnetic domain wall (such as the orientation of the Néel cap) under the action of an external magnetic field.