Abstract:We investigate transport through a single impurity in metallic zigzag carbon nanotube and find the conductance sensitively depends on the impurity strength and the bias voltage. It is rather interesting that interplay between the current-carrying scattering state and evanescent modes leads to rich phenomena including resonant backward scattering, perfect tunneling and charge accumulations. In addition, we also find a dual relation between the backscattered conductance and the charge accumulation. At the end, relevance to the experiments is discussed.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **To study the influence of a single impurity on the electrical conductivity in metallic zigzag carbon nanotubes (zigzag CNTs)**. Specifically, the author explored how the electrical conductivity depends on the changes in impurity strength and bias voltage after introducing a single impurity into the metallic zigzag carbon nanotubes.
### Main problems and background
1. **Research background**:
- Single - walled carbon nanotubes (SWCNTs) have attracted much attention due to their unique quantum transport properties.
- The number of conductive channels in metallic zigzag carbon nanotubes is limited, so defects and impurities have an important impact on the transport performance in practical applications.
- Recent experimental progress has made it possible to connect molecules to carbon nanotubes via covalent bonds, which provides a new method for studying single - molecule junctions.
- Theoretical studies have shown that vacancy defects or doped boron/nitrogen in carbon nanotubes will lead to the suppression of electrical conductivity because these defects enhance back - scattering.
2. **Research objectives**:
- To explore the influence of a single impurity on the differential electrical conductivity in metallic zigzag carbon nanotubes.
- To analyze the interaction between the scattering states carried by the current and the exponentially decaying modes, and to reveal rich physical phenomena, such as resonant back - scattering, perfect tunneling, and charge accumulation.
- To explore the dual relationship between back - scattering electrical conductivity and charge accumulation.
### Key findings
- **Electrical conductivity is sensitive to impurity strength and bias voltage**: The electrical conductivity depends not only on the strength of the impurity but also is closely related to the bias voltage.
- **Rich physical phenomena**:
- In some energy ranges, the resonant back - scattering is significantly enhanced, resulting in a completely blocked conductive channel.
- In other energy ranges, although there is a strong impurity potential, the electrical conductivity is still close to the perfect value \(G = 2G_0\), which indicates that the exponentially decaying mode makes the impurity potential transparent.
- **Dual relationship between back - scattering electrical conductivity and charge accumulation**: A dual relationship between the back - scattering electrical conductivity \(G_b\) and charge accumulation was found in the paper, and the expression is:
\[
G_b\equiv 2G_0 - G = G_0\sin^2\eta_t
\]
where \(G_0=\frac{2e^2}{h}\) is the unit of quantum conductance, and \(\eta_t\) is the phase of the transmission matrix.
### Experimental relevance
The research results of the paper are consistent with the recent experimental results, that is, the defects in carbon nanotubes can become opaque in the Coulomb blockade region and become transparent at other bias voltages. In addition, methods for systematically creating defects have been developed in experiments, or the effective impurity strength can be manipulated by applying voltage pulses through the tip of an atomic force microscope.
### Summary
Through theoretical calculations and numerical simulations, this paper deeply studied the influence of a single impurity on the electrical conductivity in metallic zigzag carbon nanotubes, revealed rich physical phenomena, and provided a theoretical basis for experimental observations.