Tunable Sulfur Incorporation into Atomic Layer Deposition Films Using Solution Anion Exchange
Julia D. Lenef,Andrew J. Gayle,Jaesung Jo,Kalyn M. Fuelling,Srinivas K. Yadavalli,Alondra M. Ortiz-Ortiz,Kai Sun,Rebecca L. Peterson,Neil P. Dasgupta
DOI: https://doi.org/10.1021/acs.chemmater.2c03773
IF: 10.508
2023-03-17
Chemistry of Materials
Abstract:Metal sulfide and oxysulfide thin films deposited by atomic layer deposition (ALD) are important functional materials for a range of applications including solar cells, catalysts, and electronic devices. However, ALD of sulfur-containing films typically requires H2S, a toxic, corrosive, and flammable gas. To circumvent these challenges, we propose a method of tuning sulfur incorporation into ALD films by first growing a metal oxide, using CuO x as a model system, followed by a solution-phase sulfur anion-exchange process. By controlling the reaction time, solution molarity, and temperature, we demonstrate tunable sulfur incorporation into the films, which is described using a coupled reaction-diffusion model. The evolution of the film crystallinity, composition, and morphology was quantified as a function of the anion-exchange process parameters. Conformal anion exchange on a ZnO@TiO2@CuO core–shell–shell nanowire is shown, demonstrating the ability to maintain the conformality of the initial ALD process on high-aspect-ratio structures. Additionally, area-selective anion exchange was performed on micro-patterned substrates, illustrating a pathway toward device fabrication. Finally, the electrical properties of the converted films were evaluated, indicating a tunable reduction in sheet resistance of up to 4 orders of magnitude. In the future, the combination of ALD and anion-exchange chemistry can be used to incorporate sulfur without the need for H2S gas, while maintaining the atomically precise and conformal properties of the original ALD process.
materials science, multidisciplinary,chemistry, physical