Abstract:Rationale: Silane derivatives play a crucial role in industrial plasma processes for the fabrication of various electronic devices such as lighting devices, solar cells, and displays. Accurate quantitative data are essential for modeling technological plasmas. This study reports the rate coefficients (k) and activation energies (Ea) for thermal electron attachment to Si2Cl6, Si (CH3)3CHF2, and SiCl (CH3)2Si(CH3)3, which are key parameters for understanding the underlying processes in plasmas. The results obtained for other silane derivatives were also analyzed and discussed. Methods: The measurements were conducted using the pulsed Townsend technique. In this technique, electrons generated by a laser under an electric field travel to the anode, inducing a charge on it. In the presence of a scavenger gas, electrons are captured, leading to a decrease in the rate of charge increase over time. The kinetic parameters were deduced from the shape of the pulse. The G4 method was used to obtain bond dissociation energies (BDEs). Results: This study determined the kinetic parameters for thermal electron attachment to Si2Cl6, Si (CH3)3CHF2, and SiCl (CH3)2Si(CH3)3 for the first time. The rate coefficients at 298 K were found to be 2.17 ± 0.04 × 10-9cm3s-1, 2.01 ± 0.09 × 10-12cm3s-1, and 8.05 ± 0.07 × 10-12cm3s-1, respectively. The corresponding activation energies were determined to be 0.37 ± 0.04 eV, 0.29 ± 0.03 eV, and 0.21 ± 0.01 eV for Si2Cl6, Si (CH3)3CHF2, and SiCl (CH3)2Si(CH3)3, respectively. The experiment was conducted over the temperature range of 298-378 K. Conclusions: The findings of this study provide significant new insights into fundamental parameters such as rate coefficients and activation energies for thermal electron capture by chlorinated and fluorinated silane derivatives. These data contribute to advancing our understanding of thermal electron interactions with chlorosilanes, which can be utilized for controlling important species in the plasmas of various modern technologies.

Direct measurements of the energy flux due to chemical reactions at the surface of a silicon sample interacting with a SF6 plasma

Micromechanical Measurement of Active Sites on Silicon Nitride Using Surface Free Energy Variation

Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma

Thermal electron attachment to halogenated silanes in the gas phase

Laser Induced Plasma in the Formation of Surface-Microstructured Silicon

Etching of Si at low temperatures using a SF6 reactive ion beam: Effect of the ion energy and current density

Studies of atomic and molecular fluorine reactions on silicon surfaces

Electron-impact ionization of Si IV-VIII in hot plasmas

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

Electrical Conduction of Silicon Oxide Containing Silicon Quantum Dots

SiC Measurements of Electron Energy by fs Laser Irradiation of Thin Foils

Production of higher silanes in radio frequency SiH4 and H2-SiH4 plasmas

Measurement of rotational temperature using SiH(A2Δ-X2Π) emission spectrum in SiH4–H2 plasmas

Plasma-surface interaction studies in the HL-1 tokamak

Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H2-SiH4 plasma

Absolute measurement of vacuum ultraviolet fluxes from inductively coupled plasmas via metal surface photoemission currents

Electron-impact ionization of Si IV-VIII relevant for inertial confinement fusion

Dry Etching of Silicon Materials in SF 6 Based Plasmas: Roles of and Gas Additives

Glow discharge-optical emission spectroscopy for in situ analysis of surfaces in plasmas

Measurements of the Quantum Yield of Silicon using Geiger-mode Avalanching Photodetectors

Silicon Photoelectrode Thermodynamics and Hydrogen Evolution Kinetics Measured by Intensity-Modulated High-Frequency Resistivity Impedance Spectroscopy