E. H. Hwang,S. Das Sarma
Abstract:We investigate transport and Coulomb drag properties of semiconductor-based electron-hole bilayer systems. Our calculations are motivated by recent experiments in undoped electron-hole bilayer structures based on GaAs-AlGaAs gated double quantum well systems. Our results indicate that the background charged impurity scattering is the most dominant resistive scattering mechanism in the high-mobility bilyers. We also find that the drag transresistivity is significantly enhanced when the electron-hole layer separation is small due to the exchange induced renormalization of the single layer compressibility.
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to explore the transport properties and Coulomb drag characteristics in undoped electron - hole bilayer systems. Specifically, the author focuses on the influence of background charged impurity scattering on the transport properties and inter - layer Coulomb drag in the semiconductor electron - hole bilayer system based on the GaAs - AlGaAs gated double - quantum - well structure.
### Main problems:
1. **Transport properties**: To study whether background charged impurity scattering is the main resistive scattering mechanism in the high - mobility electron - hole bilayer system.
2. **Coulomb drag characteristics**: To study whether the Coulomb drag resistivity is significantly enhanced when the electron - hole layer spacing is small, and to explore the reasons for this enhancement.
3. **Explanation of experimental phenomena**: To attempt to explain the abnormal drag resistance behavior observed in recent experiments, especially the phenomenon that the drag resistance increases as the temperature decreases at low temperatures.
### Research background:
- **Electron - hole bilayer system**: Two quantum wells are placed close to each other, with a high - insulating barrier in between to suppress inter - layer tunneling. In this system, at low carrier densities, the inter - layer Coulomb interaction may be dominant, leading to the emergence of new collective states or quantum phase transitions.
- **Experimental progress**: In recent years, two - dimensional electron - hole bilayer systems prepared by heterostructure insulated - gate field - effect transistors (HIGFETs) have enabled the independent adjustment of the carrier density in each layer, and have the characteristics of high mobility and adjustable low density.
### Research methods:
- **Theoretical model**: Use the many - body Fermi liquid theory and the Boltzmann transport theory to calculate the carrier mobility and the frictional Coulomb drag resistivity.
- **Scattering mechanism**: Consider the elastic scattering caused by background charged impurities and the influence of the inter - layer Coulomb interaction on the drag resistance.
- **Formula derivation**: The expressions of related physical quantities, such as mobility and drag resistivity, are derived in detail in the paper, involving multiple complex integral and differential equations.
### Key findings:
- **Background charged impurity scattering**: It is the main resistive scattering mechanism in the high - mobility bilayer system.
- **Enhancement of drag resistance**: When the electron - hole layer spacing is small, the drag resistance is significantly enhanced due to the exchange - induced monolayer compressibility renormalization.
- **Abnormal behavior at low temperatures**: The increase in drag resistance observed in experiments at low temperatures cannot be explained by the Fermi liquid theory, which may imply the emergence of a new non - Fermi - liquid phase.
### Conclusion:
Through a detailed theoretical study of the undoped electron - hole bilayer system, the paper reveals the important influence of background charged impurity scattering on the transport properties, and points out the limitations of the existing Fermi liquid theory in explaining some experimental phenomena, providing a theoretical basis for further exploration of new collective states.
### Formula examples:
- Mobility formula:
\[
\mu=\frac{e\langle\tau\rangle}{m}
\]
where \(e\) is the electron charge, \(m\) is the effective mass, and \(\langle\tau\rangle\) is the energy - averaged transport relaxation time.
- Drag resistivity formula:
\[
\rho_D = \frac{\hbar^2}{2\pi e^2 n p k_B T}\int\frac{q^2d^2q}{(2\pi)^2}\int d\omega\frac{F_e(q,\omega)F_h(q,\omega)}{\sinh^2(\beta\omega / 2)}
\]
where \(F_{e,h}(q,\omega)=|u_{sc}^{eh}(q,\omega)|\Im\Pi_{e,h}(q,\omega)\), \(u_{sc}^{eh}=v_c^{eh}/\epsilon(q,\omega)\) is the dynamically screened inter - layer Coulomb interaction, and \(\Pi(q,\omega)\) is the two - dimensional polarizability.
These formulas show...