Abstract:The sputtering of hexagonal boron nitride due to low energy xenon ion bombardments occurs in various applications including fabrication of cubic boron nitride and erosion of Hall thruster channel walls. At low ion energies, accurate experimental characterization of sputter yields increases in difficulty due to the low yields involved. A molecular dynamics model is employed to simulate the sputtering process and to calculate sputter yields for ion energies ranging from 10 eV to 350 eV. The results are compared to experimental data and a semi-empirical expression developed by Bohdansky is found to adequately describe the simulation data. Surface temperature effects are also investigated, and the sputter yield at 850 K is approximately twice that at 423 K.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Accurate characterization of the sputtering yield when low - energy xenon ions bombard hexagonal boron nitride (h - BN)**. ### Detailed Explanation: 1. **Background and Motivation**: - Hexagonal boron nitride (h - BN) is of great significance in various applications, such as the preparation of cubic boron nitride (c - BN) and the erosion of the channel wall in Hall thrusters. In particular, in Hall thrusters, the erosion of the channel wall due to ion bombardment is one of the main factors affecting its service life. - In the low - energy range (<300 eV), it is very difficult to measure the sputtering yield experimentally because the yield is low and difficult to measure accurately. 2. **Research Objectives**: - Calculate the sputtering yield when xenon ions with low energy (10 eV to 350 eV) bombard h - BN through molecular dynamics (MD) simulations. - Compare the simulation results with experimental data and develop a semi - empirical formula that can describe these simulation data. - Investigate the influence of surface temperature on the sputtering yield. 3. **Method Selection**: - Use the molecular dynamics (MD) model to simulate the sputtering process because the MD method can provide results close to the first - principles while maintaining the computational feasibility. - Compared with the Monte Carlo method based on the binary - collision approximation (BCA), the MD method is more accurate at low energy because it takes into account the multi - body collision effect. 4. **Key Findings**: - The simulation results show that the sputtering yield at 850 K is approximately twice that at 423 K. - The Bohdansky formula can fit the MD simulation data very well, especially in the low - energy range. ### Summary: This paper aims to accurately characterize the sputtering yield when low - energy xenon ions bombard hexagonal boron nitride through molecular dynamics simulations, thereby providing theoretical support for material life assessment in applications such as Hall thrusters.

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