New crystalline 1D/2D/3D indium selenides directed by piperidine and auxiliary solvents

Chaozhuang Xue,Jian Lin,Yifan Zhang,Zhiyang Liu,Rui Li,Shuwen Gong,Konggang Qu

DOI: https://doi.org/10.1039/d2dt00174h

IF: 4

2022-01-01

Dalton Transactions

Abstract:Controlling the auxiliary solvents resulted in four crystalline chalcogenide structures in the In–Se–PR system.

chemistry, inorganic & nuclear

What problem does this paper attempt to address?

Auxiliary Ligand-Assisted Two Novel One-Dimensional Indium Coordination Polymers: Synthesis, Crystal Structures and Photoluminescence Characterization Effected by Solvent and Temperature

Xinming Wang,Ruiqing Fan,Píng Wang,Liangsheng Qiang,Yang,Yulei Wang

DOI: https://doi.org/10.1016/j.inoche.2014.11.002

2015-01-01

Abstract:Two new indium coordination polymers (CPs) with mixed-ligand formulated as {[In(1,4-bda) 1.5 (phen)]·2H 2 O} n ( In1 ) and {In(1,4-bda)(2,2′-bipy)Cl} n ( In2 ) (1,4-H 2 bda = 1,4-benzenedicarboxylic acid; phen = 1,10-phenanthrolin; 2,2′-bipy = 2,2′-bipyridine) have been synthesized and characterized by single-crystal X-ray diffraction, infrared (IR), elemental analysis and thermal gravimetric analyses (TGA). In1 exhibits one-dimensional (1D) ladder chain, which further forms three-dimensional (3D) structure with π⋯π stacking interaction. Formation of 3D compact supramolecular framework in In2 is generated through C–H…Cl hydrogen bonding contacts and π⋯π stacking interaction. The photoluminescence (PL) characterizations to In1 and In2 affected by solvent and temperature are studied in detail. Thermogravimetric curves showed that In1 and In2 start to undergo phase transition until ca. 450 °C and 495 °C, respectively.
Solvothermal processes to indium selenide precursors and their conversion to phase-pure polycrystalline In 2Se 3

Cuihong Wang,Yadong Li,Jin Wang,Zhaoxiang Deng,RuJi Wang,Shoushan Fan

2001-01-01

Main Group Metal Chemistry

Abstract:Two indium selenide precursors were solvothermally synthesized in ethylenediamine (en) and hydrazine hydrate with indium powder (or InCl 3-4H 2O) and selenium under 190°. After decomposition at 300° for five hours under flowing argon, the two precursors gave phase-pure polycrystalline In 2Se 3. The two precursors and the final product were characterized by TGA, X-ray fluorescence spectroscopy, X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), UV-vis, FTIR and Raman spectroscopy. In the en system, white phosphorus must be added to ensure the completion of the reaction. As to the hydrazine hydrate system, besides solvent and complex agent, it also acts as reductive in one case.
New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties

Yuanhui Sun,Yawen Li,Tianshu Li,Koushik Biswas,Amalia Patanè,Lijun Zhang

DOI: https://doi.org/10.48550/arXiv.2004.13273

2020-04-28

Abstract:The two-dimensional (2D) semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, we report on the discovery of new polymorphs of InSe with enhanced electronic properties. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, we identify polymorphs that consist of a centrosymmetric monolayer belonging to the point group D$_{3d}$, distinct from the well-known polymorphs based on the D$_{3h}$ monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. We discuss opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy and second harmonic generation experiments.

Materials Science,Mesoscale and Nanoscale Physics
Cs3In(In4Se7)(P2Se6): A Multi‐Chromophore Chalcogenide with Excellent Nonlinear Optical Property Designed by Group Grafting

Zhen Qian,Hongping Wu,Zhanggui Hu,Jiyang Wang,Yicheng Wu,Hongwei Yu

DOI: https://doi.org/10.1002/anie.202400892

2024-02-03

Angewandte Chemie International Edition

Abstract:Non-centrosymmetric (NCS) and polar materials capable of exhibiting many important functional properties are indispensable for electro-optical technologies, yet their rational structural design remains a significant challenge. Here, we report a "group grafting" strategy for designing the first multi-chromophore selenophosphate, Cs3In(In4Se7)(P2Se6), that crystallizes in a NCS and polar space group of Cm. The structure features a unique basic building unit (BBU) [In(In4Se10)(P2Se6)], formed through "grafting [In4Se10] supertetrahedra on the root of [In(P2Se6)2] groups". Theoretical calculations confirm that this [In(In4Se10)(P2Se6)] BBU can achieve a "1 + 1 > 2" combination of properties from two chromophores, [In4Se10] supertetrahedron and ethane-like [P2Se6] dimer. That makes Cs3In(In4Se7)(P2Se6) exhibit excellent linear and nonlinear optical (NLO) properties, including a strong second harmonic generation (SHG) response (~6 × AgGaS2), a large band gap (2.45 eV), broad infrared (IR) transmission (up to 19.5 μm), a significant birefringence (0.26 @1064 nm) as well as the congruently-melting property at ~700 °C. Therefore, Cs3In(In4Se7)(P2Se6) will be a promising NLO crystal, especially in the IR region, and this research also demonstrates that "group grafting" will be an effective strategy for constructing novel polar BBUs with multi-chromophore to design NCS structures and high-performance IR NLO materials.

chemistry, multidisciplinary
Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Yunhai Li,Xianghong Niu,Jinlan Wang

DOI: https://doi.org/10.1016/j.flatc.2019.100092

IF: 5.829

2019-01-01

FlatChem

Abstract:In this work we systematically investigate the impact of lateral strain on the electronic structure and optical properties of monolayer indium selenide (InSe) and its atomic origin with density functional theory, tightbinding models and many-particle perturbation theory. Free-standing InSe has an indirect band gap due to its special bonding nature. Compressive strain enhances the coupling between Se 4p(x)/4p(y) states more significantly than Se 4p(z) states, eventually reordering the valence bands and converting the band gap from indirect to direct. The selection rules in single-particle regime are still valid when electron-hole interaction is included. The lowest exciton is active under vertically polarized light for free-standing InSe with a low transition matrix element. Under compressive strain the lowest exciton becomes active under lateral polarization and its transition matrix element increases significantly, indicating improvement of the photoluminescence performance. This study provides thorough understanding into the impact of strain as well as guides to tailor the electronic structure and optical properties of monolayer InSe.
SOLVOTHERMAL PROCESSES TO INDIUM SELENIDE PRECURSORS AND THEIR CONVERSION TO PHASE-PURE POLYCRYSTALLINE In2Se3

C Wang,YD Li,JW Wang,ZX Deng,RJ Wang,SS Fan

DOI: https://doi.org/10.1515/mgmc.2001.24.1.21

2001-01-01

Main Group Metal Chemistry

Abstract:Two indium selenide precursors were solvothermally synthesized in ethylenediamine (en) and hydrazine hydrate with indium powder (or InCl3.4H(2)O) and selenium under 190 degrees. After decomposition at 300 degrees for five hours under flowing argon, the two precursors gave phase-pure polycrystalline In2Se3. The two precursors and the final product were characterized by TGA, X-ray fluorescence spectroscopy, X-ray diffraction pattern (XRD), transmission electron microscopy (TEM), UV-vis, FTIR and Raman spectroscopy. In the en system, white phosphorus must be added to ensure the completion of the reaction. As to the hydrazine hydrate system, besides solvent and complex agent, it also acts as reductive in one case.
Selective crystal growth of indium selenide compounds from saturated solutions grown in a selenium vapor

Chao Tang,Yohei Sato,Katsuya Watanabe,Tadao Tanabe,Yutaka Oyama

DOI: https://doi.org/10.1016/j.rinma.2022.100253

2022-03-01

Results in Materials

Abstract:Indium selenide compounds are promising materials for energy conversion, spintronic applications, and chemical sensing. However, it is difficult to grow stoichiometric indium selenide crystals due to the high equilibrium selenium vapor pressure and the complicated phase equilibrium system of indium selenide compounds. In this paper, we apply a novel and convenient crystal growth method, in which the saturated solution is grown by the application of a selenium vapor. In this method, selenium vapor at a pressure higher than the saturated vapor pressure is applied to molten indium, such that the selenium continuously dissolves into the indium solution until the solubility at the growth temperature is reached; then a slow cooling process results in crystallization. The selenium dose is matched to its solubility so that indium selenide compounds can be selectively grown just by controlling the temperature without the need to consider the chemical ratio in the solution. The pressure of the vapor is controlled during the whole growth process so that any deviation from a stoichiometric composition in the crystal can be controlled. Both InSe and In2Se3 were successfully grown using this method, and we have investigated the growth mechanism and found the growth window for each compound. This study presents a novel and convenient approach to fabricating transitional metal chalcogenides without deficiencies in the chalcogen element.

English Else
Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Wenshan Zheng,Tian Xie,Yu Zhou,Y. L. Chen,Wei Jiang,Shuli Zhao,Jinxiong Wu,Yumei Jing,Yue Wu,Guanchu Chen,Yunfan Guo,Jianbo Yin,Shaoyun Huang,H. Q. Xu,Zhongfan Liu,Hailin Peng

DOI: https://doi.org/10.1038/ncomms7972

IF: 16.6

2015-01-01

Nature Communications

Abstract:Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi 2 Se 3 topological insulator with a record high Hall mobility of ∼1,750 cm 2 V −1 s −1 at room temperature. Furthermore, our patterned two-dimensional In 2 Se 3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W −1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.
Theoretical investigation on the electronic structure of new InSe/CrS2 van der Waals heterostructure

Yahui Guo,Li Zhao,Daoyuan Zheng

DOI: https://doi.org/10.1557/s43578-022-00548-8

IF: 2.7

2022-05-06

Journal of Materials Research

Abstract:Atomically thin, two-dimensional (2D) indium selenide (InSe) is a new graphene-like semiconducting material which has gained significant attention due to the large tunability in the bandgap (from 1.4 to 2.6 eV) and high carrier mobility. Constructing InSe-based van der Waals heterostructure (vdWH) is a potential way to achieve more desirable properties and further extend the application of InSe. Herein, we firstly demonstrate the electronic and optical properties of the InSe/CrS2 vdWH by using first-principles calculation. Our results suggest that this heterostructure has an intrinsic mixing band alignment with the bandgap of 1.20 eV, which shows a good light absorption in visible light region. Meanwhile, an intrinsic mixing band alignment can be transformed between type-I and type-II. Moreover, the bandgap values can be tuned by applying electric field. These results indicate that the flexible InSe/CrS2 vdWH can provide new ways to utilize 2D materials in future optoelectronic devices.Graphical abstract

materials science, multidisciplinary
Patterning Two-Dimensional Chalcogenide Crystals of Bi2se3 and In2se3 and Efficient Photodetectors

Wenshan Zheng,Tian Xie,Yu Zhou,Y. L. Chen,Wei Jiang,Shuli Zhao,Jinxiong Wu,Yumei Jing,Yue Wu,Guanchu Chen,Yunfan Guo,Jianbo Yin,Shaoyun Huang,H. Q. Xu,Zhongfan Liu,Hailin Peng

DOI: https://doi.org/10.1038/ncomms7972

IF: 16.6

2015-01-01

Nature Communications

Abstract:Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of similar to 1,750 cm(2)V (-1) s (-1) at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of similar to 1,650 AW (-1) at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.
Syntheses, Crystal Structures, and Electronic Structures of Quaternary Group IV-Selenide Semiconductors

Subhendu Jana,Eric Gabilondo,Scott McGuigan,Paul A. Maggard

DOI: https://doi.org/10.1021/acs.inorgchem.4c00363

IF: 4.6

2024-03-28

Inorganic Chemistry

Abstract:Early transition-metal chalcogenides have garnered recent attention for their optoelectronic properties for solar energy conversion. Herein, the first Zr-/Hf-chalcogenides with a main group cation, Ba(9)Hf(3)Sn(2)Se(19) (1) and Ba(8)Zr(2)SnSe(13)(Se(2)) (2), have been synthesized. The structure of 1 is formed from isolated SnSe(4)^(4-) tetrahedra and distorted HfSe(6) octahedra. The latter condense via face-sharing trimeric motifs that are further vertex-bridged into chains of...

chemistry, inorganic & nuclear
The crystal structure and characterization of 2-D and 3-D indium phosphates synthesized from a water/ethylene glycol mixed-solvent system

GenWu Ge,Yuxiang Hu,MeiPin Liu,Yizhi Li,Hongbin Du,Xiaozeng You

DOI: https://doi.org/10.1016/j.ica.2011.12.024

IF: 3.118

2012-01-01

Inorganica Chimica Acta

Abstract:Three indium phosphates [In16(HPO4)28(H2O)12](NH4)8(H2O)12 (1), [In2(OH)(HPO4)2(PO4)](H2O)(C6H18N2) (2) and [In3(HPO4)6](C2N2H10)(H3O)(H2O)2 (3) were solvothermally synthesized from water/ethylene glycol (EG) mixed solvent systems by using 1,3-propyldiamine (1,3-PDA), 2-methyl-pentamethylenediamine (MPMD) and diethylenetriamine (DETA) as structure directing agents (SDAs), respectively. Compound 1 consists of anionic layers of [In7(HPO4)14(H2O)6]7−, which are connected by InO6 octahedra to form an anionic three-dimensional (3-D) open framework with intersecting 12-membered rings channels. The channels are filled with charge-balancing ammonium cations and guest water molecules. Compound 2 possesses a 2-D layered structure consisting of anionic layers of [In2(OH)(HPO4)2(PO4)]2– formed by InO6 octahedra and PO4 tetrahedra, in which the protonated MPMD and water molecules lie between the layers. Compound 3 is constructed from a [3.3.3] propellane-like building unit made of strict alternation of InO6 octahedra and PO4H tetradedra, forming a 3-D open framework with intersecting 8- and 12-membered ring channels. The protonated water and ethylenediamine derived from the decomposition of DETA during the synthesis are located within the channels. The three compounds were characterized by powder X-ray diffraction (PXRD), single crystal X-ray diffraction, Fourier-transformed infrared (FT-IR) spectra, thermogravimetric analysis (TGA), inductively coupled plasma-atomic emission spectroscope (ICP-AES) and elemental analyses.
Sequentially PVD‐Grown Indium and Gallium Selenides Under Compositional and Layer Thickness Variation: Preparation, Structural and Optical Characterization

Martina Schmid,Mithuran Ketharan,Jan Lucaßen,Ihab Kardosh

DOI: https://doi.org/10.1002/admi.202301086

IF: 5.4

2024-03-29

Advanced Materials Interfaces

Abstract:Indium and gallium selenide films are innovatively grown in a sequential physical vapor deposition process starting from metal precursor layers of various thicknesses, which are then subject to chalcogenization in different selenium contents. By Raman and XRD spectroscopy, all the compounds In2Se3, InSe, In4Se3, Ga2Se3, and GaSe as well as different polytypes are identified. Optical bandgaps range up to 2 eV. Group IIIA metal chalcogenides are an auspicious material system due to their variability of properties and hence the multitude of application options, for example, in the fields of optoelectronic, thermoelectric, piezo‐, and ferroelectric devices. Indium and gallium selenide films are innovatively grown in a sequential PVD (physical vapor deposition) process starting from metal precursor layers of various thicknesses, which are then subject to chalcogenization in different selenium contents. The resulting thin films are investigated for structural and optical properties by Raman, XRD (X‐ray diffraction), and UV–Vis–NIR spectrometry, revealing that all the compounds In2Se3, InSe, In4Se3, Ga2Se3, and GaSe as well as different polytypes can be achieved depending on the metal/chalcogen ratio. Results from Raman and XRD spectroscopy are highly consistent, and also from the optical measurements changes in absorption characteristics can be correlated. The results indicate, that by fine‐tuning the selenium content, deliberately growing ultra‐thin layers of the different indium and gallium phases will be possible, thus opening up a promising route for 2D material fabrication. Given the scalability of the fabrication method, it is highly promising for large‐scale deployment of the materials.

materials science, multidisciplinary,chemistry
Excited State Regulated Emission in Hybrid Indium Halides via Crystal Structure Switch

Fangping Lin,Shuai Zhang,Bingsuo Zou,Ruosheng Zeng

DOI: https://doi.org/10.1021/acs.inorgchem.3c04630

IF: 4.6

2024-02-23

Inorganic Chemistry

Abstract:Organic-inorganic metal halides have become one of the most promising materials in the next generation of optoelectronic applications due to their high charge carrier mobility and tunable band gaps. In this study, Sb:PA(6)InCl(9) and Sb:PA(4)NaInCl(8) single crystals were prepared through evaporation crystallization, respectively. Due to the different degrees of lattice distortions, the highly efficient yellow emission in Sb:PA(6)InCl(9) at 610 nm and the green emission in Sb:PA(4)NaInCl(8) at...

chemistry, inorganic & nuclear
Mixed Solvothermal Synthesis of T n Cluster-Based Indium and Gallium Sulfides Using Versatile Ammonia or Amine Structure-Directing Agents

Meng Sun,Shu Zhang,Kai-Yao Wang,Juan Wang,Lin Cheng,Jia-Ying Zhu,Yi-Ming Zhao,Cheng Wang

DOI: https://doi.org/10.1021/acs.inorgchem.1c00171

IF: 4.6

2021-04-29

Inorganic Chemistry

Abstract:Metal chalcogenide supertetrahedral Tn clusters are of current interest for their unique compositions and structures, which rely highly on the structure-directing agents. Herein, we report four novel Tn cluster-based indium and gallium sulfides, namely, [NH(CH3)3]4In4S10H4 (1), (NH3)4Ga4S6 (2), [NH3CH2CH3]5(NH2CH2CH3)2Ga11S19 (3), and [NH3CH2CH2OH]6Ga10S18·2NH2CH2CH2OH (4). All four compounds were solvothermally synthesized in mixed amine–ethanol solutions or deep eutectic solvent (DES), where ammonia/amine molecules play significant structure-directing roles in the speciation and crystal growth. (1) Being protonated, the trimethylamine and ethanolamine molecules surround the T2-[In4S10H4]4– clusters (for 1) and [Ga10S18]n6n– open framework (for 4), respectively, compensating for the negative charge of the inorganic moieties. (2) With the lone pair of electrons, the ammonia molecules in 2 coordinate directly to corner Ga3+ ions of the {Ga4S6} cage to give a neutral T2-(NH3)4Ga4S6 cluster. (3) For compound 3, part of the ethylamine molecules act as terminating ligands for the T1 and T3 units in the [Ga11S19(NH2CH2CH3)2]n5n– layer, while the rest act as interlamellar countercations upon protonation. Theoretical studies reveal the contributions of N, C, and H to the density of states (DOS) for 2 and 3 because of their hybrid structures that combine the ammonia/amine ligands with sulfide moieties together.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.inorgchem.1c00171?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.inorgchem.1c00171</a>.XRD patterns, FTIR, NMR, and UV–vis reflectance spectra (<a class="ext-link" href="/doi/suppl/10.1021/acs.inorgchem.1c00171/suppl_file/ic1c00171_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

chemistry, inorganic & nuclear
3D Lead‐Organoselenide‐Halide Perovskites and their Mixed‐Chalcogenide and Mixed‐Halide Alloys

Hemamala Karunadasa,Jiayi Li,Yang Wang,Santanu Saha,Zhihengyu Chen,Jan Hofmann,Jason Misleh,Karena W. Chapman,Jeffrey A. Reimer,Marina R. Filip

DOI: https://doi.org/10.1002/anie.202408443

2024-07-08

Angewandte Chemie International Edition

Abstract:We incorporate Se into the 3D halide perovskite framework using the zwitterionic ligand: SeCYS (+NH3(CH2)2Se−), which occupies both the X− and A+ sites in the prototypical ABX3 perovskite. The new organoselenide‐halide perovskites: (SeCYS)PbX2 (X = Cl, Br) expand upon the recently discovered organosulfide‐halide perovskites. Single‐crystal X‐ray diffraction and pair distribution function analysis reveal the average structures of the organoselenide‐halide perovskites, whereas the local lead coordination environments and their distributions were probed through solid‐state 77Se and 207Pb NMR, complemented by theoretical simulations. Density functional theory calculations illustrate that the band structures of (SeCYS)PbX2 largely resemble those of their S analogs, with similar band dispersion patterns, yet with a considerable bandgap decrease. Optical absorbance measurements indeed show bandgaps of 2.07 and 1.86 eV for (SeCYS)PbX2 with X = Cl and Br, respectively. We further demonstrate routes to alloying the halides (Cl, Br) and chalcogenides (S, Se) continuously tuning the bandgap from 1.86 to 2.31 eV—straddling the ideal range for tandem solar cells or visible‐light photocatalysis. The comprehensive description of the average and local structures, and how they can fine‐tune the bandgap and potential trap states, respectively, establishes the foundation for understanding this new perovskite family, which combines solid‐state and organo‐main‐group chemistry.

chemistry, multidisciplinary
Syntheses, crystal structure, and photoelectric properties of two selenoantimonates A–Zn–Sb–Se (A = Rb and Cs)

Lirong Zhang,Gele Teri,Liming Qi,Sagala Bai,Xin Liu,Menghe Baiyin

DOI: https://doi.org/10.1039/d4dt01944j

IF: 4

2024-08-21

Dalton Transactions

Abstract:Metal chalcogenides, as a new class of semiconductor materials, have a broad range of applications in synthetic chemistry due to their rich structures and excellent properties. We have synthesized two selenoantimonates A 4 Zn 2 Sb 2 Se 7 [A = Rb( 1 ), Cs( 2 )] under solvothermal conditions in the visible region using a band gap optimization strategy with alkali metals as structure-directing agents. Compounds 1 and 2 have a two-dimensional layered structure consisting of charge-balanced Rb + ( 1 ) or Cs + ( 2 ) cations and [Zn 2 Sb 2 Se 7 ] 4− anions with novel 20-membered rings (20-MR) [Zn 6 Sb 4 Se 10 ] with an aperture of 5.6949 × 13.7741 Å 2 formed in the middle. Furthermore, we have investigated the crystal structure, band gap, photoelectronic properties, and energy band structure.

chemistry, inorganic & nuclear
A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$

Kejian Qu,Zachary W. Riedel,Irián Sánchez-Ramírez,Simon Bettler,Junseok Oh,Emily N. Waite,Nadya Mason,Peter Abbamonte,Fernando de Juan Sanz,Maia G. Vergniory,Daniel P. Shoemaker

DOI: https://doi.org/10.48550/arXiv.2210.11615

2022-10-21

Abstract:The discovery of new low-dimensional transition metal chalcogenides is contributing to the already prosperous family of these materials. In this study, needle-shaped single crystals of a new quasi-one-dimensional material (Nb$_4$Se$_{15}$I$_2$)I$_2$ were grown by chemical vapor transport, and the structure was solved by single crystal X-ray diffraction (XRD). The new structure has one-dimensional (Nb$_4$Se$_{15}$I$_2$)$_n$ chains along the [101] direction, with two I$^-$ ions per formula unit directly bonded to Nb$^{5+}$. The other two I$^-$ ions are loosely coordinated and intercalate between the chains. Individual chains are chiral, and stack along the $b$ axis in opposing directions, giving space group $P2_1/c$. The phase purity and crystal structure was verified by powder XRD. Density functional theory calculations show (Nb$_4$Se$_{15}$I$_2$)I$_2$ to be a semiconductor with a direct band gap of around 0.6 eV. Resistivity measurements of bulk crystals and micro-patterned devices demonstrate that (Nb$_4$Se$_{15}$I$_2$)I$_2$ has an activation energy of around 0.1 eV, and no anomaly or transition was seen upon cooling. (Nb$_4$Se$_{15}$I$_2$)I$_2$ does not undergo structural phase transformation from room temperature down to 8.2 K, based on cryogenic temperature single crystal XRD. This compound represents a well-characterized and valence-precise member of a diverse family of anisotropic transition metal chalcogenides.

Materials Science
An In-Situ Chloride-Generated Route to Various One-Dimensional Nanostructures of Chromium-Based Compounds

Leshu Yu,Yanwen Ma,Jianmin Zhu,Hui Feng,Qiang Wu,Yinong Lu,Weiwei Lin,Hai Sang,Zheng Hu

DOI: https://doi.org/10.1021/jp800984h

2008-01-01

Abstract:A convenient in-situ chloride-generated route has been developed to fabricate various novel one-dimensional nanostructures of Cr-based compounds including CrSi2, CrN and SiNx-coated CrSi2, CrN (with a trace of CrSi2), and CrN-CrSi2 intermediate composites for the first time. And the evolution of the products has been clearly illuminated on the basis of involved chemistry and the convincing characterization results. The diverse regulation of the products, the simplicity of the preparation procedure, and the wide potential applications of this route make this study both scientifically and technologically interesting.
Pressure-controlled Structural Symmetry Transition in Layered InSe

Huimin Su,Xuan Liu,Chengrong Wei,Junning Li,Zeyuan Sun,Qiye Liu,Xuefeng Zhou,Junhong Deng,Huan Yi,Qiaoyan Hao,Yusheng Zhao,Shanmin Wang,Li Huang,Shiwei Wu,Wenjing Zhang,Guixin Li,Jun-Feng Dai

DOI: https://doi.org/10.48550/arXiv.1903.04315

2019-03-11

Abstract:Structural symmetry of crystals plays important roles in physical properties of two-dimensional (2D) materials, particularly in the nonlinear optics regime. It has been a long-term exploration on the physical properties in 2D materials with various stacking structures, which correspond to different structural symmetries. Usually, the manipulation of rotational alignment between layers in 2D heterostructures has been realized at the synthetic stage through artificial stacking like assembling Lego bricks. However, the reconfigurable control of translational symmetry of crystalline structure is still challenging. High pressure, as a powerful external control knob, provides a very promising route to circumvent this constraint. Here, we experimentally demonstrate a pressure-controlled symmetry transition in layered InSe. The continuous and reversible evolution of structural symmetries can be in-situ monitored by using the polarization-resolved second harmonic generation (SHG) spectroscopy. As pressure changes, the reconfigurable symmetry transition of the SHG pattern from three-fold rotational symmetry to mirror symmetry was experimentally observed in a layered InSe samples and was successfully explained by the proposed interlayer-translation model. This opens new routes towards potential applications of manipulating crystal symmetry of 2D materials.

Optics,Materials Science

New crystalline 1D/2D/3D indium selenides directed by piperidine and auxiliary solvents

Auxiliary Ligand-Assisted Two Novel One-Dimensional Indium Coordination Polymers: Synthesis, Crystal Structures and Photoluminescence Characterization Effected by Solvent and Temperature

Solvothermal processes to indium selenide precursors and their conversion to phase-pure polycrystalline In 2Se 3

New Polymorphs of Two-Dimensional Indium Selenide with Enhanced Electronic Properties

Cs3In(In4Se7)(P2Se6): A Multi‐Chromophore Chalcogenide with Excellent Nonlinear Optical Property Designed by Group Grafting

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

SOLVOTHERMAL PROCESSES TO INDIUM SELENIDE PRECURSORS AND THEIR CONVERSION TO PHASE-PURE POLYCRYSTALLINE In2Se3

Selective crystal growth of indium selenide compounds from saturated solutions grown in a selenium vapor

Patterning two-dimensional chalcogenide crystals of Bi 2 Se 3 and In 2 Se 3 and efficient photodetectors

Theoretical investigation on the electronic structure of new InSe/CrS2 van der Waals heterostructure

Patterning Two-Dimensional Chalcogenide Crystals of Bi2se3 and In2se3 and Efficient Photodetectors

Syntheses, Crystal Structures, and Electronic Structures of Quaternary Group IV-Selenide Semiconductors

The crystal structure and characterization of 2-D and 3-D indium phosphates synthesized from a water/ethylene glycol mixed-solvent system

Sequentially PVD‐Grown Indium and Gallium Selenides Under Compositional and Layer Thickness Variation: Preparation, Structural and Optical Characterization

Excited State Regulated Emission in Hybrid Indium Halides via Crystal Structure Switch

Mixed Solvothermal Synthesis of T n Cluster-Based Indium and Gallium Sulfides Using Versatile Ammonia or Amine Structure-Directing Agents

3D Lead‐Organoselenide‐Halide Perovskites and their Mixed‐Chalcogenide and Mixed‐Halide Alloys

Syntheses, crystal structure, and photoelectric properties of two selenoantimonates A–Zn–Sb–Se (A = Rb and Cs)

A new quasi-one-dimensional transition metal chalcogenide semiconductor (Nb$_4$Se$_{15}$I$_2$)I$_2$

An In-Situ Chloride-Generated Route to Various One-Dimensional Nanostructures of Chromium-Based Compounds

Pressure-controlled Structural Symmetry Transition in Layered InSe