Deformation mechanisms of Si-doped diamond-like carbon films under uniaxial tension conditions

Yifeng Yu,Weiwei Tang,Zhe Liu,Lichun Bai
DOI: https://doi.org/10.1016/j.diamond.2020.108099
IF: 3.806
2020-12-01
Diamond and Related Materials
Abstract:<p>Element-doped diamond-like carbon (DLC) films have been fabricated to achieve excellent mechanical properties but their elastic/plastic deformation mechanisms are unclear due to experimental limitations in characterizing the deformation process. This study investigates the deformation mechanisms of Si-doped DLC films by simulating their uniaxial tensile tests. It is found that these films show many strain-localized regions under tensile deformations. The coordination number (<em>CN</em>) of Si atoms in such regions decreases even with a small tensile strain. The sp<sup>3</sup>-sp<sup>2</sup> bonding transition of C atoms also happen in these regions with a large tensile strain. As a result, these regions show highly-degraded structures with weak mechanical strength and can be regarded as the defects in the Si-DLC films. In this case, the tensile forces are mainly undertaken by the networks formed of both sp<sup>3</sup>C atoms and Si atoms with large <em>CN</em>, and hence such networks can be regarded as backbones of Si-DLC films. Their fracture finally initiates in the strain-localized regions. Furthermore, Si-DLC films with an increased Si content show large fraction of sp<sup>3</sup>C atoms but still exhibit a decreased strength due to the rapid presence of strain-localized regions.</p>
materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
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