Understanding Large Plastic Deformation of SiC Nanowires at Room Temperature

J. Wang,C. Lu,Q. Wang,P. Xiao,F. J. Ke,Y. L. Bai,Y. G. Shen,X. Z. Liao,H. J. Gao
DOI: https://doi.org/10.1209/0295-5075/95/63003
2011-01-01
EPL (Europhysics Letters)
Abstract:Tensile behaviors of SiC [111] nanowires with various possible microstructures have been investigated by molecular-dynamics simulations. The results show that the large plastic deformation in these nanowires is induced by the anti-parallel sliding of 3C grains along an ultrathin intergranular amorphous film parallel to the (11 (1) over bar) plane and inclined at an angle of 19.47 degrees. with respect to the nanowire axis. The resulting large plastic deformation of SiC nanowires at room temperature is attributed to the stretching, breaking and re-forming of Si-C bonds in the intergranular amorphous film, which is also evident from the sawtooth jumps in the stress-strain response. Copyright (C) EPLA, 2011
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