Abstract:▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of layer-by-layer growth. Elastic relaxation on the facet edges, renormalization of the surface energy of the facets, and interaction between neighboring islands via the substrate are the driving forces for self-organized growth. The dimensions of the defect-free islands are of the order λ B , the de Broglie wavelength, and provide three-dimensional quantum confinement of carriers. Self-organized In(Ga)As/GaAs quantum dots, or quantum boxes, are grown by molecular beam expitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) on GaAs, InP, and other substrates and are being incorporated in microelectronic and opto-electronic devices. The use of strain to produce self-organized quantum dots has now become a well-accepted approach and is widely used in III–V semiconductors and other material systems. Much progress has been made in the area of growth, where focus has been on size control, and on optical characterization, where the goal has been the application to lasers and detectors. The unique carrier dynamics in the dots, characterized by femtosecond pump-probe spectroscopy, has led to novel device applications. This article reviews the growth and electronic properties of InGaAs quantum dots and the characteristics of interband and intersublevel lasers and detectors and modulation devices.

Molecular-Beam Epitaxy of Metamorphic InAs/InGaAs Quantum-Dot Heterostructures Emitting in the Telecom Wavelength Range

Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

2.0 Μ M Wavelength InAs Quantum Dashes Grown on a GaAs Substrate Using a Metamorphic Buffer Layer

Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Optical and electronic properties of symmetric InAs/InGaAlAs/InP quantum dots formed by a ripening process in molecular beam epitaxy: a promising system for broad-range single-photon telecom emitters

Comparing InGaAs and GaAsSb Metamorphic Buffer Layers on GaAs Substrates for InAs Quantum Dots Emitting at 1.55μm

QUANTUM DOT OPTO-ELECTRONIC DEVICES

Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

Fabrication of InGaAs Quantum Dot 2D-Arrays on GaAs(001) by MBE

Growth and Photoluminescence of InxGa1−xAs Quantum Dots on the Surface of GaAs Nanowires by Metal Organic Chemical Vapor Deposition

Growth and Emission Tuning of InAs/InP Quantum Dots Superlattice

Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range

Structure and Photoluminescence Study of InGaAs/GaAs Quantum Dots Grown Via Cycled (inas)n/(gaas)nmonolayer Deposition

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission

1.55Μm InAs Quantum Dots Grown on a GaAs Substrate Using a GaAsSb Metamorphic Buffer Layer

Highly Uniform and Symmetric Epitaxial InAs Quantum Dots Embedded Inside Indium Droplet Etched Nanoholes.

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth