Abstract:β-Ga2O3 is an ultra-wide bandgap semiconductor (Eg~4.8 eV) of interest for many applications, including optoelectronics. Undoped Ga2O3 emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants. In this work, we investigate the crystal lattice recovery of (2¯01)-oriented β-Ga2O3 crystals implanted with Yb ions to the fluence of 1 ×1014 at/cm2. Post-implantation annealing at a range of temperature and different atmospheres was used to investigate the β-Ga2O3 crystal structure recovery and optical activation of Yb ions. Ion implantation is a renowned technique used for material doping, but in spite of its many advantages such as the controlled introduction of dopants in concentrations exceeding the solubility limits, it also causes damage to the crystal lattice, which strongly influences the optical response from the material. In this work, post-implantation defects in β-Ga2O3:Yb crystals, their transformation, and the recovery of the crystal lattice after thermal treatment have been investigated by channeling Rutherford backscattering spectrometry (RBS/c) supported by McChasy simulations, and the optical response was tested. It has been shown that post-implantation annealing at temperatures of 700-900 °C results in partial crystal lattice recovery, but it is accompanied by the out-diffusion of Yb ions toward the surface if the annealing temperature and time exceed 800 °C and 10 min, respectively. High-temperature implantation at 500-900 °C strongly limits post-implantation damage to the crystal lattice, but it does not cause the intense luminescence of Yb ions. This suggests that the recovery of the crystal lattice is not a sufficient condition for strong rare-earth photoluminescence at room temperature and that oxygen annealing is beneficial for intense infrared luminescence compared to other tested environments.

Self-Organization of a 2D Lattice on a Surface of Ge Single Crystal after Irradiation with Yag: ND Laser

Numerical Simulations of Germanium Nanofilm under Femtosecond Pulse Laser Heating

Highly regular nanogratings on amorphous Ge films via laser-induced periodic surface sublimation

Theoretical and Experimental Study of Laser Induced Damage on Gaas by Nanosecond Pulsed Irradiation

Numerical Analysis of Ultrashort Pulse Laser-Induced Thermomechanical Response of Germanium Thin Films

Space-selective Precipitation of Ge Crystalline Patterns in Glasses by Femtosecond Laser Irradiation.

Self-Organized Nanogratings in Glass Irradiated by Ultrashort Light Pulses

Investigation Of Nonlinear Absorption And Laser Damage On Lithium-Niobate Single-Crystals

Growth of YAG:Nd laser crystals by Horizontal Directional Crystallization in Protective Carbon‐Containing Atmosphere

Measurement of Ehrlich-Schwoebel barrier contribution to the self-organized formation of ordered surface patterns on Ge(001)

Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

Surface and Structural Investigations on Laser Irradiated P-Type Silicon

Laser Induced Crystallization of As-Deposited Amorphous Ge2Sb2Te5 Films

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-Ga2O3

Investigation on the thermal effects of NaYF 4 :Er under 1550 nm irradiation.

Investigation on Damage Process of Gaas Induced by 1064 Nm Continuous Laser

An intermediate morphology in the patterning of the crystalline Ge(001) surface induced by ion irradiation

Direct-write laser-induced self-organization and metallization beyond the focal volume in tellurite glass

Development of Microstructures in Laser Surface Remelting of Dd2 Single Crystal

Interaction of low-fluence femtosecond laser pulses with a composite layer containing Ge nanoclusters: A novel type of nanofoam formation

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization