Abstract:We study plasma effects in a micromachined high-electron mobility transistor (HEMT) with the microcantilever serving as the gate using the developed a model. The model accounts for mechanical motion of the microcantilever and spatio-temporal variations (plasma effects) of the two-dimensional electron gas(2DEG) system in the transistor channel. The microcantilever mechanical motion is described in the point-mass approximation. The hydrodynamic electron transport model is used to describe distributed electron plasma phenomena in the 2DEG system. Using the developed model, we calculated the response function characterizing the amplitude microcantilever oscillations and the output electric signal as functions of the signal frequency and the bias voltage for the devices with different parameters. We find the voltage dependences of the frequency of the mechanical resonance and its damping. In particular, it is demonstrated that the amplitudes of the mechanical oscillations and output electric signal exhibit pronounced maxima at the bias voltages close to the voltage of the 2DEG channel depletion followed by a steep drop with further increase in the bias voltage.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the plasma effects in micromachined high - electron - mobility transistors (HEMTs). Specifically, the article focuses on the spatio - temporal variations (i.e., plasma effects) of the two - dimensional electron gas (2DEG) system caused by the mechanical motion of the micro - cantilever in HEMT devices using the micro - cantilever as a gate. These problems include: 1. **Interaction between the mechanical motion of the micro - cantilever and the 2DEG system**: How does the mechanical motion of the micro - cantilever affect the electron density and self - consistent electric field of the 2DEG system, and vice versa? 2. **Influence of plasma effects**: How do these effects affect the response characteristics of the device, especially the behavior at the resonance frequency? 3. **Influence of bias voltage on device performance**: The variation laws of the micro - cantilever oscillation amplitude and output electrical signal under different bias voltages. By establishing a model that can self - consistently describe the mechanical oscillation of the micro - cantilever and the dynamic characteristics of the 2DEG system, the authors aim to gain an in - depth understanding of these complex phenomena and provide a theoretical basis for designing high - performance micromachined HEMT devices. In particular, they focus on the performance of plasma effects under high - frequency signals (such as the terahertz band) and their influence on device performance. ### Key points of the model - **Mechanical motion equation of the micro - cantilever**: Describes the motion of the micro - cantilever under mechanical and electrical forces. - **Electron transport equation of the 2DEG system**: A hydrodynamic model is used to describe the electron transport process in the 2DEG. - **Boundary conditions**: The charge interaction between the micro - cantilever and the 2DEG channel and the potential drop in the contact area are considered. ### Main findings - **Influence of bias voltage on resonance frequency and damping**: As the bias voltage approaches the 2DEG channel depletion voltage, the resonance frequency shifts and the oscillation damping increases. - **Influence of high - frequency signals on the position of the micro - cantilever**: Relatively high - frequency signals (corresponding to the plasma resonance frequency) can significantly change the position of the micro - cantilever. - **Electric field oscillation during plasma resonance**: Near plasma resonance, the micro - cantilever is very sensitive to the input AC signal, which enables the micromachined HEMT to be used as a mechanical resonance detector for microwave and terahertz radiation. In conclusion, this research provides an important theoretical basis for understanding and optimizing micromachined HEMT devices, especially in applications involving plasma effects and high - frequency signal processing.

Plasma effects in a micromachined floating-gate high-electron-mobility transistor

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

Present Progress of Plasma Transport Study on HL-2A

New Experimental Results Obtained using Microwave Reflectometry in HL-2 A Tokamak

Electron Temperature Gradient Turbulence: Validation in the Columbia Linear Machine Experiments

Plasma Instability and Amplified Mode Switching Effect in THz Field Effect Transistors with Grating Gate

Investigation of terahertz plasma oscillations in nano-scaled double-gate MOSFETs by Monte Carlo method

Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT

A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors

Effect of Electric Field On Electron Mobility in Sub-100 nm InAlN/GaN High Electron Mobility Transistors

The effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

Analysis of electrical performance of MgZnO/ZnO high electron mobility transistor

Model-based prediction of the plasma oscillation excitation response characteristics of a high-electron mobility transistor-based terahertz photomixer with the cap region

The role of electron viscosity on plasma-wave instability in HEMTs

Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors

Acoustic and optical plasmons excitation in double-channel AlGaN/GaN HEMT under asymmetric boundaries

Predictive of the Quantum Capacitance Effect on the Excitation of Plasma Waves in Graphene Transistors with Scaling Limit.

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

A theoretical approach to study the thermal impact of the DC and RF characteristics of a MgZnO/ZnO HEMT

Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise