Low-Threshold Surface-Passivated Photonic Crystal Nanocavity Laser

Dirk Englund,Hatice Altug,Jelena Vuckovic

DOI: https://doi.org/10.1063/1.2769957

2007-06-21

Abstract:The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative surface recombination rate, resulting in a four-fold reduction in lasing threshold. A three-level carrier dynamics model explains the results and shows that lasing threshold is as much determined by surface recombination losses as by the cavity quality factor (Q). Surface passivation therefore appears crucial in operating such lasers under practical conditions.

Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to reduce the non - radiative surface recombination rate of photonic crystal nanocavity lasers through surface passivation technology, thereby significantly reducing the laser threshold and improving its efficiency and operating range**.

Specifically, the authors studied the effect of treating and passivating InGaAs quantum well (QW) gain media and GaAs thin films with (NH₄)₂S. This treatment can significantly reduce the non - radiative surface recombination rate, thereby reducing the laser threshold by four times. In addition, through passivation treatment, the operating range of the laser can be extended from low temperature to room temperature under practical application conditions, and it can operate at THz modulation rates.

### Main problems and solutions:
1. **Problem**: In the photonic crystal (PC) structure, the embedded quantum well (QW) exposes a large surface area, resulting in severe non - radiative (NR) surface recombination, which limits the performance of PC lasers.
2. **Solution**: Through (NH₄)₂S surface passivation treatment, the NR surface recombination rate is reduced, which in turn significantly reduces the laser threshold. The experimental results show that the passivated laser exhibits a four - fold reduction in the NR surface recombination rate, resulting in a four - fold reduction in the laser threshold as well.

### Research methods:
- **Sample preparation**: Use a 7% aqueous solution of (NH₄)₂S to passivate the surfaces of GaAs and In₀.₂Ga₀.₈As.
- **Measurement means**: Analyze the NR surface recombination rate and laser characteristics before and after passivation through time - resolved photoluminescence (PL) measurement and a three - level carrier dynamics model.

### Results and conclusions:
- After passivation, the NR surface recombination lifetime is extended from approximately 33.8 ps to 142 ps, indicating a significant reduction in the NR surface recombination rate.
- The laser threshold is reduced by four times, enabling the laser to operate at room temperature and high modulation rates.
- The three - level carrier dynamics model explains the experimental results well, indicating that NR surface recombination has an important impact on the laser threshold.

In conclusion, this study demonstrates the great potential of surface passivation technology in improving the performance of photonic crystal nanocavity lasers, providing a new approach for achieving highly efficient, low - threshold photonic crystal lasers.