Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing

Stefan Skalsky,Yunyan Zhang,Juan Arturo Alanis,H. Aruni Fonseka,Ana M. Sanchez,Huiyun Liu,Patrick Parkinson

DOI: https://doi.org/10.1038/s41377-020-0279-y

2020-03-17

Light: Science and Applications

Abstract:Abstract Continuous room temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q -factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high Q -factors of 1250 ± 90 corresponding to end-facet reflectivities of R = 0.73 ± 0.02. By using optimised direct–indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room temperature lasing thresholds (~6 μJ cm −2 pulse −1 ) for III–V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.