Domains in Three-dimensional Ferroelectric Nanostructures: Theory and Experiment

G. Catalan,J.F. Scott,A. Schilling,J. M. Gregg

DOI: https://doi.org/10.1088/0953-8984/19/13/132201

2007-01-10

Abstract:Ferroelectric random access memory cells (FeRAMs) have reached 450 x 400 nm production (0.18 micron^2) at Samsung with lead zirconate-titanate (PZT), 0.13 micron^2 at Matsushita with strontium bismuth tantalate (SBT), and comparable sizes at Fujitsu with BiFeO3. However, in order to increase storage density, the industry roadmap requires by 2010 that such planar devices be replaced with three-dimensional structures. Unfortunately, little is known yet about even such basic questions as the domain scaling of 3-d nanodevices, as opposed to 2-d thin films. Here we report the experimental measurement of nano-domains in ferroelectric nanocolumns, together with a theory of domain size in 3-d structures which explains the observations.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Domain size scaling behavior of ferroelectric materials in three - dimensional nanostructures and its theoretical explanation**.

Specifically, with the development of miniaturization of electronic devices, the thickness of ferroelectric thin films in planar devices has approached the limit, and further increasing the storage density requires a shift to three - dimensional structures. However, for these three - dimensional nanostructures (such as nanopillars, nanotubes, etc.), it is still unclear how the domain size changes with the lateral size. Therefore, researchers hope to understand the scaling laws of domain sizes in these three - dimensional ferroelectric nanostructures through experimental measurements and theoretical analysis.

### Main problems:
1. **Domain size scaling behavior**: How does the ferroelectric domain size change with the lateral size of three - dimensional nanostructures?
2. **Theoretical model**: How to extend the existing two - dimensional thin - film theories (such as Kittel's law) to be applicable to three - dimensional structures?
3. **Experimental verification**: Measure the domain structure in ferroelectric nanopillars through experiments and verify the accuracy of the theoretical model.

### Research background:
- Ferroelectric random - access memories (FeRAMs) have achieved micron - level production in companies such as Samsung, Panasonic, and Fujitsu.
- In order to increase the storage density, the industry roadmap requires replacing planar devices with three - dimensional structures by 2010.
- Currently, there are relatively few studies on three - dimensional ferroelectric nanostructures, especially regarding the basic problem of domain size scaling.

### Combination of experiment and theory:
- **Experimental part**: BaTiO₃ single - crystal nanopillars with different lateral sizes were prepared by focused ion beam (FIB) cutting technology, and the domain structures in them were observed.
- **Theoretical part**: Based on the principle of energy minimization, considering the influence of surface energy and domain wall energy, a domain size scaling formula applicable to three - dimensional structures was proposed:

\[
w^2=\frac{2\sigma}{U_x + U_y y^2/x^2}
\]

where:
- \( w \) is the domain width,
- \( \sigma \) is the domain wall energy density,
- \( U_x \) and \( U_y \) are the surface energy constants of the X - plane and Y - plane respectively,
- \( x \) and \( y \) are the lateral sizes of the nanopillars.

### Conclusion:
Through experimental and theoretical analysis, the researchers found that:
- In three - dimensional nanopillars, the domain size is mainly determined by the lateral size \( y \), and the influence of \( y \) is more significant than that of \( x \).
- The proposed theoretical model can well explain the experimental results and provides a new tool for future research on other three - dimensional ferroelectric structures.

In summary, this paper solves the key problem of domain size scaling in ferroelectric materials in three - dimensional nanostructures through the combination of experiment and theory, providing an important basis for further developing high - performance ferroelectric memory devices.