Abstract:Spintronics strives to revolutionize conventional electronics by integrating magnetic materials with semiconductor devices, such as the spin field effect transistor (SFET), which not only improve the capabilities of electronic devices, but develop new functionalities. For electrodes of spin injection and detection in SFET device, half metallic Fe 3 O 4 is an attractive candidate because its high Curie temperature of 858 K, large spin polarization near 100% at the Fermi level and relatively high electronic conductivity at room temperature, which is believed to benefit the injection of spin carriers into the semiconductors. For ferromagnetic metal(FM)/Semiconductor system, Fe 3 O 4 /GaAs is a very promising system for the fabrication of magnetoelectronic devices due to the Schottky contact of the Fe 3 O 4 /GaAs interface, which is crucial for studying the behaviors of spin dependent transportation for the devices. It is reported that in a FM/I/NM/I/FM double tunnel junction, where NM is the normal metal, and I the insulating barrier, theories predicted an oscillation of the tunneling magnetoresistance (TMR) effect as a function of the NM layer thickness because the spin polarization of the tunneling electron oscillates as a result of the resonant tunneling. Furthermore, Quantum oscillation of spin polarization in GaAs channel was experimentally demonstrated. In this paper, we have presented a theoretical approach to the tunneling conductance and TMR in a Fe 3 O 4 /GaAs/Fe 3 O 4 magnetic double tunnel junction with both ballistic and diffusive components.

High quality Fe3-deltaO4/InAs hybrid structure for electrical spin injection

The Compositional, Structural, and Magnetic Properties of a Fe3O4/Ga2O3/GaN Spin Injecting Hetero-Structure Grown by Metal-Organic Chemical Vapor Deposition

Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties

Realization of high-quality Sr4Fe6O13 epitaxial film and its phase competition with SrFeO2.5

Epitaxy of Fe3O4 on Si(001) by pulsed laser deposition using a TiN/MgO buffer layer

Structural stability and electronic properties of the new superconductor (Ca4Al2O6 - X)(Fe2As2) from first-principles study

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Direct Observation of Spin Polarization in Epitaxial Fe3O4(001)/MgO Thin Films Grown by Magnetron Sputtering

A Robust Approach for the Growth of Epitaxial Spinel Ferrite Films

Epitaxial Growth of Spinel Cobalt Ferrite Films on MgAl$_2$O$_4$ Substrates by Direct Liquid Injection Chemical Vapor Deposition

Growth of Mixed Phased Films of Γ-Fe2o3and Half Metallic Fe3O4using (100) MgO/Fe under Layer for Spin Electronic Devices

Electronic states and structural characterization in single-crystal Fe–Ni–O alloy thin films grown by molecular beam epitaxy

Fabrication of single-crystalline YFeO3 films with large antiferromagnetic domains

Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy

Possible spin gapless semiconductor type behaviour in CoFeMnSi epitaxial thin films

Epitaxial Growth of (1 1 1)-Oriented Spinel CoCr$_2$O$_4$/Al$_2$O$_3$ Heterostructures

Emergent high-temperature insulating ferromagnetism in Sr4Fe5CoO13- δ epitaxial thin films

Oscillatory tunneling magnetoresistance in Fe<inf>3</inf>O<inf>4</inf>/GaAs/Fe<inf>3</inf>O<inf>4</inf> junction

Towards Spin-Polarized Two-Dimensional Electron Gas at a Surface of an Antiferromagnetic Insulating Oxide

Oscillatory Spin Polarization and Magneto-Optical Kerr Effect in Fe3o4 Thin Films on Gaas(001)

Growth of [001]-oriented polycrystalline Heusler alloy thin films using [001]-textured Ag buffer layer on thermally oxidized Si substrate for spintronics applications