Abstract:Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the formation of CeO$_2$ as a secondary phase could be avoided for $p_{O_2}\ge 8 $Pa. However, transmission electron microscopy shows the presence of CeO$_2$ nanoclusters, even in those films which appear to be single phase in XRD. With O$_2$ annealing, the metal-to-insulator transition temperature increases, while the saturation magnetization decreases and stays well below the theoretical value for electron-doped La$_{0.7}$Ce$_{0.3}$MnO$_3$ with mixed Mn$^{3+}$/Mn$^{2+}$ valences. The same trend is observed with decreasing film thickness from 100 to 20 nm, indicating a higher oxygen content for thinner films. Hall measurements on a film which shows a metal-to-insulator transition clearly reveal holes as dominating charge carriers. Combining data from x-ray photoemission spectroscopy, for determination of the oxygen content, and x-ray absorption spectroscopy (XAS), for determination of the hole concentration and cation valences, we find that with increasing oxygen content the hole concentration increases and Mn valences are shifted from 2+ to 4+. The dominating Mn valences in the films are Mn$^{3+}$ and Mn$^{4+}$, and only a small amount of Mn$^{2+}$ ions can be observed by XAS. Mn$^{2+}$ and Ce$^{4+}$ XAS signals obtained in surface-sensitive total electron yield mode are strongly reduced in the bulk-sensitive fluorescence mode, which indicates hole-doping in the bulk for those films which do show a metal-to-insulator transition.

Peak resistance temperature and low temperature resistivity in thin film $La_{1-x} Ca_x Mn O_3$ mixtures for x <= 1/3

The Grain Size Dependence of the Resistance Behaviors in Doped Lanthanum Manganite Polycrystalline Films

Resistivity Minimum and the Electronic Strongly Correlation Characteristic for La2/3Sr1/3MnO3 Thin Film

Magnetotransport Properties in La1−xCaxMnO3 (x=0.33, 0.5) Thin Films Deposited on Different Substrates

GIANT MAGNETORESISTANCE EFFECT OF THE La1-xCaxMnO3 SYSTEM

Preparation and Structure of La_(0.5)Ca_(0.5)Mn_xTi_(1-x)O_3 Thin Film Deposited by Magneto Controlled Sputtering

Crystal and magnetic structure of La$_{1-x}$Ca$_{x}$MnO$_{3}$ compound $(0.11\leq x\leq 0.175

Band filling effect on polaron localization in La$_{1-x}($Ca$_y$Sr$_{1-y}$)$_{x}$MnO$_3$ manganites

Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca

Resistivity Variation In Heteroepitaxial La0.7ca0.3mno3/Gd0.67sr0.33mno3 Multilayers With Different Thicknesses Of The La0.7ca0.3mno3 Layers

Phase diagram and magnetic properties of La$_{1-x}$Ca$_x$MnO$_3$ compound for $0\leq x \leq 0.23$

Heat conductivity of valence doped La0.7Ca0.3Mn1−xFexO3−δ

Electric and Magnetic Properties of La0.67sr0.33mno3 Thin Films with A Metal-Insulator Crossover Behavior

Magnetoresistance And Magnetization Of La-2/3(Ca0.60ba0.40)(1/3)Mno3 In Different Temperature Ranges

Mn valence instability in La2/3Ca1/3MnO3 thin films

Transport, magnetic, and structural properties of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films. Evidence for hole-doping

Field Dependence of Magnetoresistance in Epitaxial Single-Crystal La 2/3 Ca 1/3 MnO 3-Δ Thin Film

Transport and magnetic properties of La0.8Ce0.2MnO3 thin films grown by pulsed laser deposition

Effect of Columnar Structures on Resistivity Behavior of Epitaxial La0.8MnO3 Thin Films

Substrate and Thickness Effects on Structure and Transport Properties of La2/3ca1/3mno3 Films

Eminent Room-Temperature Temperature Coefficient of Resistivity in La0.76Ba0.24MnO3/LaAlO3 Films