Abstract:With silicon being the go-to material for spin qubits, and motivated by the demand of a scalable quantum computer architecture for fast and reliable quantum information transfer on-chip, we study coherent electron transport in a silicon double quantum dot. We first examine the valley-orbital dynamics in a silicon double dot, and discuss how to properly measure the tunnel couplings as well as the valley phase difference between two quantum dots. We then focus on possible phase and spin flip errors during spin transport across a silicon double dot. In particular, we clarify correction on the effective $g$-factor for the electron spin from the double dot confinement potential, and quantify the resulting phase error. We then study spin fidelity loss due to spin-valley mixing, which is a unique feature of silicon quantum dots. We show that a small phase correction between valleys can cause a significant coherence loss. We also investigate spin flip errors caused by either an external inhomogeneous magnetic field or the intrinsic spin-orbit coupling. We show that the presence of valleys makes it possible to have much broader (in terms of interdot detuning) level anti-crossings compared to typical anti-crossings in, for example, a GaAs double dot, and such broad anti-crossings lead to amplification of spin flip errors. Lastly, we design a pulse sequence to suppress various possible spin flip errors by taking advantage of the multiple level anti-crossings in a silicon double dot and employing Landau-Zener transitions.

Inter-valley interactions in Si quantum dots

Disorder-induced valley-orbit hybrid states in Si quantum dots

Impact of the valley orbit coupling on exchange gate for spin qubits in silicon quantum dots

Valley Phase and Voltage Control of Coherent Manipulation in Si Quantum Dots.

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

Valley splitting of single-electron Si MOS quantum dots

Coherent electron transport in silicon quantum dots

Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots

Electrical manipulation of valley-qubit and valley geometric phase in lateral monolayer heterostructures

Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots

Engineered valley-orbit splittings in quantum confined nanostructures in silicon

Electric field dependence of spin qubit in a Si-MOS quantum dot

Singlet-Triplet Relaxation in Multivalley Silicon Single Quantum Dots

Interface and electromagnetic effects in the valley splitting of Si quantum dots

Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot

Berry Phase Induced Valley Level Crossing in Bilayer Graphene Quantum Dots

Spin Relaxation In A Si Quantum Dot Due To Spin-Valley Mixing

Valley relaxation in a single-electron bilayer graphene quantum dot

Low disorder and high valley splitting in silicon

Interface induced spin-orbit interaction in silicon quantum dots and prospects for scalability

Spin-orbit coupling and operation of multi-valley spin qubits