Dmitri E. Nikonov,George I. Bourianoff
Abstract:Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large magnetized current is extracted. Therefore spin gain of more than 1000 is predicted. Collective dynamics of spins under Coulomb exchange interaction is described via Semiconductor Bloch Equations.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to develop a new type of spintronics device - the "spin gain transistor" to achieve a significant spin gain (>1000). This device can generate a large spin - polarized output current when a small spin - polarized input current is applied, and can control the spin - polarization direction of the output current. This is similar to the control of a large collector - emitter current by the base current in a traditional electronic transistor.
### Specific Problems and Solutions
1. **Background and Requirements**
- Traditional spintronics devices (such as the spin modulator and spin filter proposed by Datta and Das) can only increase the spin - polarization degree of the input current or filter part of the current, and cannot achieve the gain effect like traditional transistors.
- The paper points out that the future development of spintronics depends on whether devices with spin gain can be demonstrated, that is, to amplify the spin - polarization of the output current through a small control current.
2. **Proposed New Device**
- **Spin Gain Transistor**: Inject enough carriers to create conditions for the non - magnetized semiconductor material to undergo a ferromagnetic transition. Then, inject a small spin - polarized control current to break isotropy and induce spontaneous magnetization, thereby achieving a large spin - polarized output current.
- **No External Magnetic Field Required**: This device can operate without an external magnetic field, and the voltage can control the magnetization state.
3. **Working Principle**
- **Initial State**: In the initial state, all regions are non - magnetized, and the hole density in the base region is lower than that required for the ferromagnetic transition.
- **Injected Current**: By applying a voltage to the emitter to inject current, the carrier density in the base region reaches the level required for the ferromagnetic transition. But at this time, because isotropy has not been broken, the spin is still randomly polarized.
- **Control Current**: Then, inject a small spin - polarized control current. This current breaks the symmetry, making the spins of all holes consistent with the direction of the control current.
- **Output Current**: Finally, by applying a voltage to the collector to extract current from the base region, this current is strongly spin - polarized, achieving spin gain.
4. **Mathematical Model**
- Use the Semiconductor Bloch Equations (SBEs) to describe the collective dynamics of carrier spins, taking into account the Coulomb exchange interaction.
- Through numerical simulation, study the evolution of spin in a magnetic field, the spontaneous ferromagnetic state, and the operation process of the transistor.
### Conclusion
The paper demonstrates the working principle and feasibility of the spin gain transistor through theoretical modeling and numerical simulation, providing new ideas and methods for future spintronics device design.