Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations

A New Twist on Organic Spintronics; Controlling Transport in Organic Sandwich Devices Using Fringe Fields from Ferromagnetic Films

Singlet-to-triplet Interconversion Using Hyperfine As Well As Ferromagnetic Fringe Fields

High Frequency Magnetization Rotation Induced By A Dc Spin-Polarized Current In Magnetic Nanostructures

Hysteretic magnetization behaviour influenced by spin-currents in magnetic thin films with perpendicular anisotropy

Spin-flip process through a quantum dot coupled to ferromagnetic electrodes

Quantum theory of spin-torque driven magnetization switching

Current-driven magnetization dynamics and its correlation with magnetization configurations in perpendicularly magnetized tunnel junctions

Spin-charge coupled dynamics driven by a time-dependent magnetization

Spin Transistor Built on 2D Van Der Waals Heterostructures

Spin current control of magnetism

Spin-Polaronic Effects in Electric Shuttling in a Single Molecule Transistor with Magnetic Leads

Spin Valve Effect Induced by Spin-Orbit Torque Switching

Spin-Transistor Action via Tunable Landau-Zener Transitions

Current-driven Spin Oscillations in Noncollinear Antiferromagnetic Tunnel Junctions

Electron-magnon spin conversion and magnonic spin pumping in antiferromagnet/heavy metal heterostructure

Monte Carlo Simulations of Spin Transport in a Strained Nanoscale InGaAs Field Effect Transistor

Spin transfer due to quantum fluctuations of magnetization

Spin transference and magnetoresistance amplification in a transistor

Quantum Theory of Spin-Transfer and Spin-Pumping in Collinear Antiferromagnets and Ferrimagnets

From Nanoelectronics to Nano-Spintronics.